Epitaxial growth of C54 TiSi2 on Si(001) by self-aligned process

Titanium films of 35 nm thickness are deposited on Si(001) by direct current magnetron sputtering. Rapid thermal annealing (RTA) in nitrogen atmosphere is performed on the films for 20 s at 670 degrees C. The residual titanium is etched oft, with a solution of H2O2 : NH4OH : H2O (1:1:5). A second RTA at 900 degrees C for 10 s is applied again. The result is a C54 phase of TiSi2 of 65 nm thickness. By means of X-ray diffraction analysis, transmission electron microscopy and superlattice mismatch calculation,two epitaxial relationships: (004)(C54)//(001)(Si), [11 3 0](C54)//[110](Si) and (311)(C54)//(001)(Si), [2 (7) over bar 1](C54)//[110](Si) are established.