Epitaxial growth of C54 TiSi2 on Si(001) by self-aligned process

被引：2

作者：

Wang, LM ^{[1
]}

Wu, ST ^{[1
]}

机构：

[1] Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu, Taiwan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1998年 / 37卷 / 02期

关键词：

self-aligned silicide; C54; TiSi2; rapid thermal annealing; epitaxial growth; superlattice mismatch;

D O I：

10.1143/JJAP.37.638

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Titanium films of 35 nm thickness are deposited on Si(001) by direct current magnetron sputtering. Rapid thermal annealing (RTA) in nitrogen atmosphere is performed on the films for 20 s at 670 degrees C. The residual titanium is etched oft, with a solution of H2O2 : NH4OH : H2O (1:1:5). A second RTA at 900 degrees C for 10 s is applied again. The result is a C54 phase of TiSi2 of 65 nm thickness. By means of X-ray diffraction analysis, transmission electron microscopy and superlattice mismatch calculation,two epitaxial relationships: (004)(C54)//(001)(Si), [11 3 0](C54)//[110](Si) and (311)(C54)//(001)(Si), [2 (7) over bar 1](C54)//[110](Si) are established.

引用

页码：638 / 642

页数：5

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