Nanostructured metal-insulator-metal capacitor with anodic titania

被引：10
|
作者：
Kannadassan, D. [1 ]
Karthik, R. [1 ]
Baghini, Maryam Shojaei [2 ]
Mallick, P. S. [1 ]
机构：
[1] VIT Univ, Vellore 632014, Tamil Nadu, India
[2] Indian Inst Technol, Dept Elect Engn, Bombay 76, Maharashtra, India
来源：
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2013年 / 16卷 / 02期
关键词：
Anodization; Dielectric polarization; Frequency dependent capacitance; Leakage mechanisms; Crystalline properties; MIM CAPACITORS; HIGH-DENSITY; PERFORMANCE; FILMS;
D O I：
10.1016/j.mssp.2012.10.013
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper presents fabrication and electrical characterization of barrier type TiO2 metal-insulator-metal (MIM) capacitor using anodization. Polarization process, conduction mechanisms, and structural properties are studied in detail. We found that the anodization voltage played a major role in electrical and structural properties of the thin film. The barrier type anodic TiO2 is suggested as a dielectric material for high-performance MIM capacitors. (c) 2012 Elsevier Ltd. All rights reserved.
引用
收藏
页码：274 / 281
页数：8
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