Dielectric Property and Breakdown Study of Metal-Insulator-Metal Capacitor

被引：0
|
作者：
Hota, M. K. [1 ]
Mahata, C. [1 ]
Mallik, S. [1 ]
Sarkar, C. K. [2 ]
Maiti, C. K. [1 ]
机构：
[1] Indian Inst Technol, Elect & ECE Dept, Kharagpur 721302, W Bengal, India
[2] Jadavpur Univ, Elect & Telecommun Engn Dept, Kolkata 700032, W Bengal, India
来源：
2009 4TH INTERNATIONAL CONFERENCE ON COMPUTERS AND DEVICES FOR COMMUNICATION (CODEC 2009) | 2009年
关键词：
MIM capacitor; High-k; TaAlOx; Hysteresis; Weibull; MIM; FILMS; HFO2;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Advanced metal insulator metal capacitors with ultra thin (EOT similar to 2.3-5.3nm) RF sputter-deposited TaAlOx dielectric layers having excellent electrical properties have been fabricated. With low FCC value, the small change in quadratic VCC value in hysteresis curve is also found which shows a good stability of MINI capacitor. The Weibull distribution function, which is based on the weakest-link theory, is employed to analyze the effect of EOT on the breakdown of the MIM capacitors.
引用
收藏
页码：160 / +
页数：2
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