THE STUDY ON METAL-INSULATOR-METAL CAPACITOR PERFORMANCE IMPROVEMENT

被引：0
|
作者：
Li, Po [1 ,2 ]
Peng, Jingwei [2 ]
Zhang, David Wei [1 ]
机构：
[1] Fudan Univ, Dept Microelect, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R China
[2] HHGrace Semicond, Shanghai 201203, Peoples R China
来源：
2014 12TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT) | 2014年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Metal-insulator-metal capacitor (MIMc) is one of key components in mixed signal (MS) and radio frequency (RF) circuit due to its high performance. In this work, we studied MIMc dielectric, bottom/top plate materials, thickness influence on mismatch, voltage coefficient and temperature coefficient; then a near zero voltage and temperature coefficient stacked MIMc structure was proposed and demonstrated for the first time.
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页数：3
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