Nanostructured Anodic Multilayer Dielectric Stacked Metal-Insulator-Metal Capacitors

被引：3

作者：

Karthik, R. ^{[1
]}

Kannadassan, D. ^{[1
]}

Baghini, Maryam Shojaei ^{[2
]}

Mallick, P. S. ^{[1
]}

机构：

[1] Vellore Inst Technol, Sch Elect Engn, Vellore 632014, Tamil Nadu, India

[2] Indian Inst Technol, Dept Elect Engn, Bombay 400076, Maharashtra, India

来源：

JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | 2015年 / 15卷 / 12期

关键词：

Al2O3; Anodization; High-k; Leakage Mechanisms; Metal-Insulator-Metal (MIM); Multilayer; Quadratic Voltage Coefficient of Capacitance; TiO2; TANTALUM SUPERIMPOSED LAYERS; O-18 TRACING TECHNIQUES; ELECTRICAL CHARACTERIZATION; MIM CAPACITORS; ALUMINUM-OXIDE; ANODIZATION; NIOBIUM; RELIABILITY; OXIDATION; TITANIUM;

D O I：

10.1166/jnn.2015.11636

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

This paper presents the fabrication of Al2O3/TiO2/Al2O3 metal-insulator-metal (MIM) capacitor using anodization technique. High capacitance density of >3.5 fF/mu m(2), low quadratic voltage coefficient of capacitance of <115 ppm/V-2 and a low leakage current density of 4.457 x 10(-11) A/cm(2) at 3 V are achieved which are suitable for analog and mixed signal applications. We found that the anodization voltage played a major role in electrical and structural properties of the thin film. This work suggests that the anodization method can offer crystalline multilayer dielectric stack required for high performance MIM capacitor.

引用

页码：9938 / 9943

页数：6

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