Characterization and Current Modeling of Stacked high-κ Metal-Insulator-Metal Capacitors

被引：0
|
作者：
Chao, Gui-Sheng [1 ]
Chen, Wei-Hua [1 ]
Chen, Kuan-Ju [1 ]
Lin, Chrong-Jung [1 ]
King, Ya-Chin [1 ]
机构：
[1] Natl Tsing Hua Univ, Inst Elect Engn, Microelect Lab, Hsinchu, Taiwan
来源：
2023 INTERNATIONAL VLSI SYMPOSIUM ON TECHNOLOGY, SYSTEMS AND APPLICATIONS, VLSI-TSA/VLSI-DAT | 2023年
关键词：
D O I：
10.1109/VLSI-TSA/VLSI-DAT57221.2023.10134387
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A new leakage current model for explaining the asymmetry characteristics of Metal-Insulator-Metal capacitor is proposed in this study. To improve the capacitance density while minimizing its leakage current level, new layering designs of high-kappa dielectric materials are investigated with verification on the proposed model.
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页数：2
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