Investigation of Interfaces by Atom Probe Tomography

被引:7
|
作者
Balogh, Zoltan [1 ]
Stender, Patrick [1 ]
Chellali, Mohammed Reda [1 ]
Schmitz, Guido [1 ]
机构
[1] Univ Munster, Inst Mat Phys, D-48149 Munster, Germany
关键词
GRAIN-BOUNDARY DIFFUSION; FIELD EVAPORATION; TRIPLE JUNCTIONS; RECONSTRUCTION; SEGREGATION; ENERGY; NICKEL;
D O I
10.1007/s11661-012-1517-6
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We investigated the thermodynamic and transport properties of buried interfaces with atom probe tomography. Owing to the 3D subnanometer resolution and single atom sensitivity of the method, it is possible to obtain composition profiles with high accuracy both along or normal to the interfaces. We have shown that the width of the chemical interface between the Fe and Cr system follows the Cahn-Hilliard relation with a gradient energy coefficient of 1.86 x 10(-22) J nm(2). Sharpening of the Ni/Cu interface as a result of kinetic control was directly observed. We investigated the grain boundary and triple junction transport in Fe/Cr and Ni/Cu. Cr segregation enthalpy into Fe triple junctions was found to be 0.076 eV, which falls in between the surface (0.159 eV) and grain boundary (0.03 eV) segregation enthalpies. In the investigated 563 K to 643 K (290 A degrees C to 370 A degrees C) range, Ni transport is 200 to 300 times faster in the triple junctions of Cu than in the grain boundaries. The diffusion activation enthalpy in the triple junctions is two-thirds that of the grain boundaries (0.86 and 1.24 eV, respectively). These investigations have shown that triple junctions are defects in their own right with characteristic segregation and diffusion properties: They are preferred segregation sites and can be considered as a diffusion shortcut in the grain boundary network.
引用
收藏
页码:4487 / 4495
页数:9
相关论文
共 50 条
  • [21] Investigation of the Self Tempering Effect of Martensite by Means of Atom Probe Tomography
    Sackl, S.
    Clemens, H.
    Primig, S.
    PRAKTISCHE METALLOGRAPHIE-PRACTICAL METALLOGRAPHY, 2015, 52 (07): : 374 - 383
  • [22] Atom probe tomography investigation of the microstructure of superalloys N18
    Cadel, E
    Lemarchand, D
    Chambreland, S
    Blavette, D
    ACTA MATERIALIA, 2002, 50 (05) : 957 - 966
  • [23] The investigation of boron-doped silicon using atom probe tomography
    Blavette, D.
    Cadel, E.
    Cojocaru-Miredin, O.
    Deconihout, B.
    PROCEEDINGS OF THE 11TH EUROPEAN WORKSHOP OF THE EUROPEAN-MICROBEAM-ANALYSIS-SOCIETY (EMAS) ON MODERN DEVELOPMENTS AND APPLICATIONS IN MICROBEAM ANALYSIS, 2010, 7
  • [24] Atom probe tomography of isoferroplatinum
    Parman, Stephen W.
    Diercks, David R.
    Gorman, Brian P.
    Cooper, Reid F.
    AMERICAN MINERALOGIST, 2015, 100 (04) : 852 - 860
  • [25] Atom probe tomography today
    Cerezo, Alfred
    Clifton, Peter H.
    Galtrey, Mark J.
    Humphreys, Colin J.
    Kelly, Thomas F.
    Larson, David J.
    Lozano-Perez, Sergio
    Marquis, Emmanuelle A.
    Oliver, Rachel A.
    Sha, Gang
    Thompson, Keith
    Zandbergen, Mathijs
    Alvis, Roger L.
    MATERIALS TODAY, 2007, 10 (12) : 36 - 42
  • [26] Atom Probe Tomography 2012
    Kelly, Thomas F.
    Larson, David J.
    ANNUAL REVIEW OF MATERIALS RESEARCH, VOL 42, 2012, 42 : 1 - 31
  • [27] Atom Probe Tomography of Nanowires
    Jeon, Nari
    Lauhon, Lincoln J.
    SEMICONDUCTOR NANOWIRES I: GROWTH AND THEORY, 2015, 93 : 249 - 278
  • [28] Atom probe tomography of nanostructures
    Gnaser, Hubert
    SURFACE AND INTERFACE ANALYSIS, 2014, 46 : 383 - 388
  • [29] Atom probe tomography in nanoelectronics
    Blavette, Didier
    Duguay, Sebastien
    EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, 2014, 68 (01):
  • [30] The future of atom probe tomography
    Miller, Michael K.
    Kelly, Thomas. F.
    Rajan, Krishna
    Ringer, Simon P.
    MATERIALS TODAY, 2012, 15 (04) : 158 - 165