Power amplifier resilient design for process, voltage, and temperature variations

被引：3
|
作者：
Yuan, J. S. [1 ]
Kritchanchai, E. [1 ]
机构：
[1] Univ Cent Florida, Dept Elect Engn & Comp Sci, Orlando, FL 32816 USA
来源：
MICROELECTRONICS RELIABILITY | 2013年 / 53卷 / 06期
关键词：
Power amplifiers;
D O I：
10.1016/j.microrel.2013.02.003
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper presents RF power amplifier adaptive body bias compensation technique for output power and power-added efficiency resilient to process, supply voltage, and temperature (PVT) variations. The adaptive body biasing scheme uses a current source for PVT sensing to provide resilience through the threshold voltage adjustment to maintain power amplifier performance over a wide range of variability. Analytical equations are derived for physical insight. ADS simulation results show that the resilient body biasing design improves the robustness of the power amplifier in output power and power-added efficiency over process, supply voltage, and temperature variations. (C) 2013 Elsevier Ltd. All rights reserved.
引用
收藏
页码：856 / 860
页数：5
相关论文
共 50 条
  • [1] Power amplifier resilient design for process and temperature variations using an on-chip PLL sensing signal
    Yuan, J. S.
    Chen, S.
    MICROELECTRONICS RELIABILITY, 2014, 54 (01) : 167 - 171
  • [2] Design of Voltage Reference with Low Sensitivity to Process, Supply Voltage and Temperature Variations
    Gopal, Hande Vinayak
    Baghini, Maryam Shojaei
    2013 IEEE 56TH INTERNATIONAL MIDWEST SYMPOSIUM ON CIRCUITS AND SYSTEMS (MWSCAS), 2013, : 89 - 92
  • [3] Design of CMOS IO drivers with less sensitivity to process, voltage, and temperature variations
    Esch, G
    Chen, T
    DELTA 2004: SECOND IEEE INTERNATIONAL WORKSHOP ON ELECTRONIC DESIGN, TEST APPLICATIONS, PROCEEDINGS, 2004, : 312 - 317
  • [4] Design of Voltage Overscaled Low-Power Trellis Decoders in Presence of Process Variations
    Liu, Yang
    Zhang, Tong
    Hu, Jiang
    IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS, 2009, 17 (03) : 439 - 443
  • [5] A technique to mitigate impact of process, voltage and temperature variations on design metrics of SRAM Cell
    Islam, A.
    Hasan, Mohd.
    MICROELECTRONICS RELIABILITY, 2012, 52 (02) : 405 - 411
  • [6] CMOS RF Power Amplifier Variability and Reliability Resilient Biasing Design and Analysis
    Liu, Yidong
    Yuan, Jiann-Shiun
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2011, 58 (02) : 540 - 546
  • [7] A Resilient and Power-Efficient Automatic-Power-Down Sense Amplifier for SRAM Design
    Lai, Ya-Chun
    Huang, Shi-Yu
    IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS, 2008, 55 (10) : 1031 - 1035
  • [8] Automating Design of Voltage Interpolation to Address Process Variations
    Brownell, Kevin M.
    Khan, Ali Durlov
    Wei, Gu-Yeon
    Brooks, David
    IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS, 2011, 19 (03) : 383 - 396
  • [9] DESIGN LOW VOLTAGE FGMOS OPERATIONAL AMPLIFIER FOR POWER APPLICATIONS
    Jamal, M. B. K.
    Chew, S. P.
    Khadijah, Bt, I
    Noormiza, S. Bt M.
    MATERIALS SCIENCE AND INFORMATION TECHNOLOGY, PTS 1-8, 2012, 433-440 : 4189 - 4193
  • [10] Design and Implementation of a Broadband, Low Voltage, and Low Power GaAs Power Amplifier
    Mohamed Boumalkha
    Lahsaini, Mohammed
    El Aoufi, Jamal
    Griguer, Hafid
    Taouzari, Mohamed
    Archidi, Moulay El Hassane
    El Mrabet, Otman
    Elhamadi, Taj Eddin
    Russian Microelectronics, 2024, 53 (04) : 383 - 390
12345