Power amplifier resilient design for process, voltage, and temperature variations

被引：3
|
作者：
Yuan, J. S. [1 ]
Kritchanchai, E. [1 ]
机构：
[1] Univ Cent Florida, Dept Elect Engn & Comp Sci, Orlando, FL 32816 USA
来源：
MICROELECTRONICS RELIABILITY | 2013年 / 53卷 / 06期
关键词：
Power amplifiers;
D O I：
10.1016/j.microrel.2013.02.003
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper presents RF power amplifier adaptive body bias compensation technique for output power and power-added efficiency resilient to process, supply voltage, and temperature (PVT) variations. The adaptive body biasing scheme uses a current source for PVT sensing to provide resilience through the threshold voltage adjustment to maintain power amplifier performance over a wide range of variability. Analytical equations are derived for physical insight. ADS simulation results show that the resilient body biasing design improves the robustness of the power amplifier in output power and power-added efficiency over process, supply voltage, and temperature variations. (C) 2013 Elsevier Ltd. All rights reserved.
引用
收藏
页码：856 / 860
页数：5
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