Design and Implementation of a Broadband, Low Voltage, and Low Power GaAs Power Amplifier

被引:0
|
作者
Mohamed Boumalkha [1 ]
Lahsaini, Mohammed [1 ]
El Aoufi, Jamal [2 ]
Griguer, Hafid [3 ]
Taouzari, Mohamed [4 ]
Archidi, Moulay El Hassane [1 ]
El Mrabet, Otman [5 ]
Elhamadi, Taj Eddin [5 ]
机构
[1] Electronics, Communication Systems and Energy Optimization Group (OPTIMEE), Faculty of Sciences, Moulay Ismail University, Meknès, Morocco
[2] Laboratory of Aeronautical & amp,Telecommunication, Mohammed VI, International Academy of Civil Aviation, Casablanca, Morocco
[3] Innovation Lab for Operations, Mohammed VI Polytechnic University (UM6P), Ben Guerir, Morocco
[4] Hassan First University of Settat, National School of Applied Sciences, Laboratory LISA, Berrechid,26100, Morocco
[5] Information and Telecommunication Systems Laboratory (LaSiT), FS, Abdelmalek Essaadi University, Tetouan, Morocco
关键词
Broadband amplifiers - Field effect transistors - Gallium arsenide - Integrated circuit design - Power amplifiers - Semiconducting gallium arsenide - Semiconducting indium phosphide - Structural analysis - Surface discharges;
D O I
10.1134/S106373972360098X
中图分类号
学科分类号
摘要
Abstract—This article describes the step-by-step design and implementation of a GaAs power amplifier (PA) that operates at low voltage and low power, while providing broadband coverage. The design methodology used to ensure high performance within the desired frequency range is explained in detail, and the matching network and bias circuit are implemented using microstrip technology. A PA prototype is then fabricated to demonstrate the performance of the proposed design, using the Agilent Technologies (hp)® ATF13786 field effect transistor. The evaluation of the PA’s performance involves the application of both small-signal and large-signal measurements. Notably, large-signal assessments reveal a power gain of 10 dB, a saturated output power of 15.8 dBm, power-added efficiency (PAE) of 21.8%, and drain efficiency (DE) of 26.3% at a frequency of 3.5 GHz. This design, characterized by its simplicity, compactness, and versatility, exhibits applicability across a diverse array of contexts. © Pleiades Publishing, Ltd. 2024. ISSN 1063-7397, Russian Microelectronics, 2024, Vol. 53, No. 4, pp. 383–390. Pleiades Publishing, Ltd., 2024.
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页码:383 / 390
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