X- and Ku-band Internally Matched GaN Amplifiers with more than 100W output power

被引：0
|
作者：
Noto, H. [1 ]
Maehara, H. [1 ]
Uchida, H. [1 ]
Koyanagi, M.
Utsumi, H.
Nishihara, J.
Otsuka, H. [1 ]
Yamanaka, K. [1 ]
Nakayama, M. [1 ]
Hirano, Y. [1 ]
机构：
[1] Mitsubishi Electr Corp, Informat Technol R&D Ctr, Kamakura, Kanagawa 2478501, Japan
来源：
2012 7TH EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE (EUMIC) | 2012年
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D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, internally matched GaN-HEMT high power amplifiers operating at X- and Ku-bands are presented. For the X-band amplifier, small package is adopted to reduce the over all RF module size. For the Ku-band amplifier, 4 transistor power bars are combined to obtain 100W output power. To the best of our knowledge, this is the first report that more than 100W output power is obtained from single solid state device in Ku-band.
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页码：695 / 698
页数：4
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