X- and Ku-band Internally Matched GaN Amplifiers with more than 100W output power

被引：0

作者：

Noto, H. ^{[1
]}

Maehara, H. ^{[1
]}

Uchida, H. ^{[1
]}

Koyanagi, M.

Utsumi, H.

Nishihara, J.

Otsuka, H. ^{[1
]}

Yamanaka, K. ^{[1
]}

Nakayama, M. ^{[1
]}

Hirano, Y. ^{[1
]}

机构：

[1] Mitsubishi Electr Corp, Informat Technol R&D Ctr, Kamakura, Kanagawa 2478501, Japan

来源：

2012 7TH EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE (EUMIC) | 2012年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, internally matched GaN-HEMT high power amplifiers operating at X- and Ku-bands are presented. For the X-band amplifier, small package is adopted to reduce the over all RF module size. For the Ku-band amplifier, 4 transistor power bars are combined to obtain 100W output power. To the best of our knowledge, this is the first report that more than 100W output power is obtained from single solid state device in Ku-band.

引用

页码：695 / 698

页数：4

共 50 条

[21] Internally Matched GaN FET at C-band with 220W Output Power and 56% Power Added Efficiency
Maehara, H.
Uchida, H.
Kosaka, N.
Kuwata, E.
Yamanaka, K.
Nishihara, J.
Kawashima, K.
Nakayama, M.
2012 ASIA-PACIFIC MICROWAVE CONFERENCE (APMC 2012), 2012, : 358 - 360
[22] A Hybrid 50-W GaN-HEMT Ku-Band Power Amplifier
Rautschke, Felix
Maassen, Daniel
Ohnimust, Florian
Sehenk, Lothar
Dalisda, Uwe
Boeck, Georg
2016 46TH EUROPEAN MICROWAVE CONFERENCE (EUMC), 2016, : 1079 - 1082
[23] 70 W GaN-HEMT Ku-Band Power Amplifier in MIC Technology
Maassen, Daniel
Rautschke, Felix
Ohnimus, Florian
Schenk, Lothar
Dalisda, Uwe
Boeck, Georg
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2017, 65 (04) : 1272 - 1283
[24] A Ku-band 3.4 W/mm power AlGaN/GaN HEMT on a sapphire substrate
Wang Dongfang
Chen Xiaojuan
Liu Xinyu
JOURNAL OF SEMICONDUCTORS, 2010, 31 (02)
[25] A Ku-band 3.4 W/mm power AlGaN/GaN HEMT on a sapphire substrate
王东方
陈晓娟
刘新宇
半导体学报, 2010, 31 (02) : 5 - 6
[26] A Ku-Band 40W GaN Power Amplifier MMIC for Satellite Communication
Zhu, Shiquan
Liu, Yujie
Xiao, Zhilong
Huang, Lei
Wu, Qingzhi
Mao, Shuman
Wang, Huanpeng
Xu, Yuehang
2022 IEEE MTT-S INTERNATIONAL MICROWAVE WORKSHOP SERIES ON ADVANCED MATERIALS AND PROCESSES FOR RF AND THZ APPLICATIONS, IMWS-AMP, 2022,
[27] A Ku-Band 100 W Power Amplifier under CW Operation Utilizing 0.15 μm GaN HEMT Technology
Nagasaka, Masafumi
Nakazawa, Susumu
Tanaka, Shoji
Torii, Takuma
Imai, Shohei
Utsumi, Hiromitsu
Kono, Masaki
Yamanaka, Koji
Fukumoto, Hiroshi
2016 ASIA-PACIFIC MICROWAVE CONFERENCE (APMC2016), 2016,
[28] Design, fabrication and characterising of 100 W GaN HEMT for Ku-band application附视频
任春江
钟世昌
李宇超
李忠辉
孔月婵
陈堂胜
Journal of Semiconductors, 2016, (08) : 53 - 58
[29] S-band Internally Harmonic Matched GaN FET with 330W Output Power and 62% PAE
Yamanaka, K.
Kimura, M.
Chaki, S.
Nakayama, M.
Hirano, Y.
2011 6TH EUROPEAN MICROWAVE INTEGRATED CIRCUIT CONFERENCE, 2011, : 244 - 247
[30] A fully matched Ku-band 9W PHEMT MMIC high power amplifier
Lin, C. H.
Liu, H. Z.
Chu, C. K.
Huang, H. K.
Wang, Y. H.
Liu, C. C.
Chang, C. H.
Wu, C. L.
Chang, C. S.
IEEE COMPOUND SEMICONDUCTOR INTEGRATED CIRCUIT SYMPOSIUM - 2006 IEEE CSIC SYMPOSIUM, TECHNICAL DIGEST 2006, 2006, : 165 - 168

← 1 2 3 4 5 →