A Ku-band 70-W Class GaN Internally Matched High Power Amplifier with Wide Offset Frequencies of up to 400 MHz for Multi-Carrier Satellite Communications
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作者:
Yoshioka, Takaaki
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Mitsubishi Electr Corp, High Frequency & Opt Device Works, Tokyo, JapanMitsubishi Electr Corp, High Frequency & Opt Device Works, Tokyo, Japan
Yoshioka, Takaaki
[1
]
Harauchi, Kenji
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Mitsubishi Electr Corp, High Frequency & Opt Device Works, Tokyo, JapanMitsubishi Electr Corp, High Frequency & Opt Device Works, Tokyo, Japan
Harauchi, Kenji
[1
]
Sugitani, Takumi
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Mitsubishi Electr Corp, High Frequency & Opt Device Works, Tokyo, JapanMitsubishi Electr Corp, High Frequency & Opt Device Works, Tokyo, Japan
Sugitani, Takumi
[1
]
Yamasaki, Takashi
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Mitsubishi Electr Corp, High Frequency & Opt Device Works, Tokyo, JapanMitsubishi Electr Corp, High Frequency & Opt Device Works, Tokyo, Japan
Yamasaki, Takashi
[1
]
Ichinohe, Hiroaki
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Mitsubishi Electr Corp, High Frequency & Opt Device Works, Tokyo, JapanMitsubishi Electr Corp, High Frequency & Opt Device Works, Tokyo, Japan
Ichinohe, Hiroaki
[1
]
Miyashita, Miyo
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Mitsubishi Electr Corp, High Frequency & Opt Device Works, Tokyo, JapanMitsubishi Electr Corp, High Frequency & Opt Device Works, Tokyo, Japan
Miyashita, Miyo
[1
]
Yamamoto, Kazuya
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Mitsubishi Electr Corp, High Frequency & Opt Device Works, Tokyo, JapanMitsubishi Electr Corp, High Frequency & Opt Device Works, Tokyo, Japan
Yamamoto, Kazuya
[1
]
Goto, Seiki
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Mitsubishi Electr Corp, High Frequency & Opt Device Works, Tokyo, JapanMitsubishi Electr Corp, High Frequency & Opt Device Works, Tokyo, Japan
Goto, Seiki
[1
]
机构:
[1] Mitsubishi Electr Corp, High Frequency & Opt Device Works, Tokyo, Japan
gallium nitride;
high power amplifier;
Ku-band;
intermodulation distortion;
satellite communication;
multi-carrier;
D O I:
10.1109/BCICTS48439.2020.9392968
中图分类号:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号:
0808 ;
0809 ;
摘要:
This paper describes a Ku-band 70-W class GaN internally matched high power amplifier (HPA) with wide offset frequencies of up to 400 MHz for multi-carrier satellite communications. Our proposed output matching circuit uses three different kinds of difference-frequency short-circuits for realizing the wide offset frequency operation; two of the three are embedded into a tournament-shaped output matching circuit inside the HPA package and the rest is embedded into the drain bias feed placed outside the package. In order to verify the short-circuit design and its effectiveness, the Ku-band GaN HPA was designed, fabricated, and measured. The measurement shows that the HPA achieves a peak output power of 48.6 dBm while keeping a linear output power of over 40 dBm and -26-dBc IMD3 over wide offset frequencies of up to 400 MHz. To the authors' knowledge, this HPA has the record linearity of the 400-MHz wide offset frequencies and low IMD3 of less than -25 dBc among the ever reported Ku-band GaN HPAs for multi-carrier satellite communications.
机构:
Korea Elect Technol Inst, ICT Device & Packaging Res Ctr, Seongnam, South KoreaKorea Elect Technol Inst, ICT Device & Packaging Res Ctr, Seongnam, South Korea
Park, Yunsik
Jeong, Jin Young
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机构:
RFMTL, Ansan, South KoreaKorea Elect Technol Inst, ICT Device & Packaging Res Ctr, Seongnam, South Korea
Jeong, Jin Young
Kang, Wonshil
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机构:
RFMTL, Ansan, South KoreaKorea Elect Technol Inst, ICT Device & Packaging Res Ctr, Seongnam, South Korea
Kang, Wonshil
Park, Minsoo
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机构:
Korea Elect Technol Inst, ICT Device & Packaging Res Ctr, Seongnam, South KoreaKorea Elect Technol Inst, ICT Device & Packaging Res Ctr, Seongnam, South Korea
Park, Minsoo
Kim, Dongsu
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机构:
Korea Elect Technol Inst, ICT Device & Packaging Res Ctr, Seongnam, South KoreaKorea Elect Technol Inst, ICT Device & Packaging Res Ctr, Seongnam, South Korea