A Ku-band 70-W Class GaN Internally Matched High Power Amplifier with Wide Offset Frequencies of up to 400 MHz for Multi-Carrier Satellite Communications

被引:0
|
作者
Yoshioka, Takaaki [1 ]
Harauchi, Kenji [1 ]
Sugitani, Takumi [1 ]
Yamasaki, Takashi [1 ]
Ichinohe, Hiroaki [1 ]
Miyashita, Miyo [1 ]
Yamamoto, Kazuya [1 ]
Goto, Seiki [1 ]
机构
[1] Mitsubishi Electr Corp, High Frequency & Opt Device Works, Tokyo, Japan
关键词
gallium nitride; high power amplifier; Ku-band; intermodulation distortion; satellite communication; multi-carrier;
D O I
10.1109/BCICTS48439.2020.9392968
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper describes a Ku-band 70-W class GaN internally matched high power amplifier (HPA) with wide offset frequencies of up to 400 MHz for multi-carrier satellite communications. Our proposed output matching circuit uses three different kinds of difference-frequency short-circuits for realizing the wide offset frequency operation; two of the three are embedded into a tournament-shaped output matching circuit inside the HPA package and the rest is embedded into the drain bias feed placed outside the package. In order to verify the short-circuit design and its effectiveness, the Ku-band GaN HPA was designed, fabricated, and measured. The measurement shows that the HPA achieves a peak output power of 48.6 dBm while keeping a linear output power of over 40 dBm and -26-dBc IMD3 over wide offset frequencies of up to 400 MHz. To the authors' knowledge, this HPA has the record linearity of the 400-MHz wide offset frequencies and low IMD3 of less than -25 dBc among the ever reported Ku-band GaN HPAs for multi-carrier satellite communications.
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页数:4
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