GaN Schottky Barrier Photodetectors with a β-Ga2O3 Cap Layer

被引：4

作者：

Huang, Zhen-Da ^{[1
,2
]}

Chuang, Ricky Wenkuei ^{[1
,2
,3
,4
,5
]}

Weng, Wen-Yin ^{[1
,2
]}

Chang, Shoou-Jinn ^{[1
,2
,3
,4
]}

Chiu, Chiu-Jung ^{[1
,2
]}

Wu, San-Lein ^{[6
]}

机构：

[1] Natl Cheng Kung Univ, Inst Microelect, Tainan 70101, Taiwan

[2] Natl Cheng Kung Univ, Dept Elect Engn, Tainan 70101, Taiwan

[3] Natl Cheng Kung Univ, Ctr Micro Nano Sci & Technol, Tainan 70101, Taiwan

[4] Natl Cheng Kung Univ, AOTC, Tainan 70101, Taiwan

[5] Natl Nano Device Labs NDL, Tainan 74147, Taiwan

[6] Cheng Shiu Univ, Dept Elect Engn, Kaohsiung 833, Taiwan

来源：

APPLIED PHYSICS EXPRESS | 2012年 / 5卷 / 11期

关键词：

N-TYPE GAN; THIN-FILMS; ULTRAVIOLET PHOTODETECTORS; THREADING DISLOCATIONS; DETECTORS; PERFORMANCE; DEPOSITION; EPITAXY; GROWTH;

D O I：

10.1143/APEX.5.116701

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

GaN Schottky barrier UV photodetectors (PDs) with a beta-Ga2O3 cap layer realized by furnace oxidation of GaN epitaxial layer were fabricated and characterized. With the cap layer inserted, it was found that the reverse leakage current could be reduced by more than 4 orders of magnitude and the UV-to-visible rejection ratio increased by 21 times. When compared with the conventional GaN PDs, incorporating an additional beta-Ga2O3 cap layer helps to reduce the noise level and at the same time achieve a larger detectivity. (C) 2012 The Japan Society of Applied Physics

引用

页数：3

共 50 条

[1] A β-Ga2O3/GaN Schottky-Barrier Photodetector
Weng, W. Y.
Hsueh, T. J.
Chang, S. J.
Huang, G. J.
Hsueh, H. T.
IEEE PHOTONICS TECHNOLOGY LETTERS, 2011, 23 (07) : 444 - 446
[2] GaN Schottky barrier photodetectors with a low-temperature GaN cap layer
Lee, ML
Sheu, JK
Lai, WC
Chang, SJ
Su, YK
Chen, MG
Kao, CJ
Chi, GC
Tsai, JM
APPLIED PHYSICS LETTERS, 2003, 82 (17) : 2913 - 2915
[3] Characterization of GaN Schottky barrier photodetectors with a low-temperature GaN cap layer
Lee, ML
Sheu, JK
Lai, WC
Su, YK
Chang, SJ
Kao, CJ
Tun, CJ
Chen, MG
Chang, WH
Chi, GC
Tsai, JM
JOURNAL OF APPLIED PHYSICS, 2003, 94 (03) : 1753 - 1757
[4] Investigation in the Ga2O3 passivation layer formed as GaN Schottky barrier through UV/O3 treatment
Kim, Kwangeun
RESULTS IN PHYSICS, 2020, 16
[5] GaN Schottky Barrier Photodetectors with a Semi-Insulating AlInN Cap Layer
Chang, S. J.
Weng, W. Y.
Lai, W. C.
Hsueh, T. J.
Shei, S. C.
Zeng, X. F.
Wu, S. L.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2010, 157 (04) : J120 - J124
[6] The Investigation of Hybrid PEDOT:PSS/β-Ga2O3 Deep Ultraviolet Schottky Barrier Photodetectors
Zhang, Tao
Shen, Yixian
Feng, Qian
Tian, Xusheng
Cai, Yuncong
Hu, Zhuangzhuang
Yan, Guangshuo
Feng, Zhaoqing
Zhang, Yachao
Ning, Jing
Xu, Yongkuan
Lian, Xiaozheng
Sun, Xiaojuan
Zhang, Chunfu
Zhou, Hong
Zhang, Jincheng
Hao, Yue
NANOSCALE RESEARCH LETTERS, 2020, 15 (01):
[7] The Investigation of Hybrid PEDOT:PSS/β-Ga2O3 Deep Ultraviolet Schottky Barrier Photodetectors
Tao Zhang
Yixian Shen
Qian Feng
Xusheng Tian
Yuncong Cai
Zhuangzhuang Hu
Guangshuo Yan
Zhaoqing Feng
Yachao Zhang
Jing Ning
Yongkuan Xu
Xiaozheng Lian
Xiaojuan Sun
Chunfu Zhang
Hong Zhou
Jincheng Zhang
Yue Hao
Nanoscale Research Letters, 15
[8] Characterization of β-Ga2O3 Schottky Barrier Diodes
Kaneko, T.
Muneta, I
Hoshii, T.
Wakabayashi, H.
Tsutsui, K.
Iwai, H.
Kakushima, K.
2018 18TH INTERNATIONAL WORKSHOP ON JUNCTION TECHNOLOGY (IWJT), 2018, : 47 - 49
[9] Influence of Metal on Schottky Barrier Inhomogeneity in Ga2O3 Schottky Barrier Diodes
Kim, Min-Yeong
Lee, Geon-Hee
Lee, Hee-Jae
Byun, Dong-Wook
Schweitz, Michael A.
Koo, Sang-Mo
ESSDERC 2022 - IEEE 52ND EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE (ESSDERC), 2022, : 304 - 307
[10] Schottky β-Ga2O3 Solar-Blind UV Photodetectors
Yang L.-H.
Zhang B.-H.
Guo F.-Q.
Chen D.-J.
Zhang, Bao-Hua (zbhcjxy@163.com), 1600, Chinese Institute of Electronics (48): : 1240 - 1243

← 1 2 3 4 5 →