GaN Schottky Barrier Photodetectors with a β-Ga2O3 Cap Layer

被引：4

作者：

Huang, Zhen-Da ^{[1
,2
]}

Chuang, Ricky Wenkuei ^{[1
,2
,3
,4
,5
]}

Weng, Wen-Yin ^{[1
,2
]}

Chang, Shoou-Jinn ^{[1
,2
,3
,4
]}

Chiu, Chiu-Jung ^{[1
,2
]}

Wu, San-Lein ^{[6
]}

机构：

[1] Natl Cheng Kung Univ, Inst Microelect, Tainan 70101, Taiwan

[2] Natl Cheng Kung Univ, Dept Elect Engn, Tainan 70101, Taiwan

[3] Natl Cheng Kung Univ, Ctr Micro Nano Sci & Technol, Tainan 70101, Taiwan

[4] Natl Cheng Kung Univ, AOTC, Tainan 70101, Taiwan

[5] Natl Nano Device Labs NDL, Tainan 74147, Taiwan

[6] Cheng Shiu Univ, Dept Elect Engn, Kaohsiung 833, Taiwan

来源：

APPLIED PHYSICS EXPRESS | 2012年 / 5卷 / 11期

关键词：

N-TYPE GAN; THIN-FILMS; ULTRAVIOLET PHOTODETECTORS; THREADING DISLOCATIONS; DETECTORS; PERFORMANCE; DEPOSITION; EPITAXY; GROWTH;

D O I：

10.1143/APEX.5.116701

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

GaN Schottky barrier UV photodetectors (PDs) with a beta-Ga2O3 cap layer realized by furnace oxidation of GaN epitaxial layer were fabricated and characterized. With the cap layer inserted, it was found that the reverse leakage current could be reduced by more than 4 orders of magnitude and the UV-to-visible rejection ratio increased by 21 times. When compared with the conventional GaN PDs, incorporating an additional beta-Ga2O3 cap layer helps to reduce the noise level and at the same time achieve a larger detectivity. (C) 2012 The Japan Society of Applied Physics

引用

页数：3

共 50 条

[41] Integration of β-Ga2O3 on Si (100) for Lateral Schottky Barrier Diodes
Yadav, Manoj K.
Mondal, Arnab
Kumar, Shiv
Sharma, Satinder K.
Bag, Ankush
2021 IEEE 8TH WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS (WIPDA), 2021, : 263 - 267
[42] Fabrication of Ga2O3 Schottky Barrier Diode and Heterojunction Diode by MOCVD
Jiao, Teng
Chen, Wei
Li, Zhengda
Diao, Zhaoti
Dang, Xinming
Chen, Peiran
Dong, Xin
Zhang, Yuantao
Zhang, Baolin
MATERIALS, 2022, 15 (23)
[43] Reverse Recovery and Rectification Characteristic of β-Ga2O3 Schottky Barrier Diode
Lee, Inhwan
Saha, Sudipto
Singisetti, Uttam
Yao, Xiu
2021 IEEE 8TH WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS (WIPDA), 2021, : 58 - 61
[44] Microwave Power Rectification Using β-Ga2O3 Schottky Barrier Diodes
Oishi, Toshiyuki
Urata, Kosuke
Hashikawa, Makoto
Ajiro, Kosuke
Oshima, Takayoshi
IEEE ELECTRON DEVICE LETTERS, 2019, 40 (09) : 1393 - 1395
[45] Proton irradiation Of Ga2O3 Schottky diodes and NiO/Ga2O3 heterojunctions
Polyakov, Alexander Y.
Saranin, Danila S.
Shchemerov, Ivan V.
Vasilev, Anton A.
Romanov, Andrei A.
Kochkova, Anastasiia I.
Gostischev, Pavel
Chernykh, Alexey V.
Alexanyan, Luiza A.
Matros, Nikolay R.
Lagov, Petr B.
Doroshkevich, Aleksandr S.
Isayev, Rafael Sh.
Pavlov, Yu. S.
Kislyuk, Alexander M.
Yakimov, Eugene B.
Pearton, Stephen J.
SCIENTIFIC REPORTS, 2024, 14 (01):
[46] Atomic layer deposited α-Ga2O3 solar-blind photodetectors
Moloney, J.
Tesh, O.
Singh, M.
Roberts, J. W.
Jarman, J. C.
Lee, L. C.
Huq, T. N.
Brister, J.
Karboyan, S.
Kuball, M.
Chalker, P. R.
Oliver, R. A.
Massabuau, F. C-P
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2019, 52 (47)
[47] Effect of Amorphous Layer at the Heterogeneous Interface on the Device Performance of β-Ga2O3/Si Schottky Barrier Diodes
Qu, Zhenyu
Xu, Wenhui
You, Tiangui
Shen, Zhenghao
Zhao, Tiancheng
Huang, Kai
Yi, Ailun
Zhang, David Wei
Han, Genquan
Ou, Xin
Hao, Yue
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 2023, 11 : 135 - 140
[48] Ga2O3 Schottky Barrier Diodes with n--Ga2O3 Drift Layers Grown by HVPE
Higashiwaki, Masataka
Sasaki, Kohei
Goto, Ken
Nomura, Kazushiro
Quang Tu Thieu
Togashi, Rie
Murakami, Hisashi
Kumagai, Yoshinao
Monemar, Bo
Koukitu, Akinori
Kuramata, Akito
Yamakoshi, Shigenobu
2015 73RD ANNUAL DEVICE RESEARCH CONFERENCE (DRC), 2015, : 29 - 30
[49] Solar-blind photodetectors based on MXenes-β-Ga2O3 Schottky junctions
Chen, Yancheng
Zhang, Kuikui
Yang, Xun
Chen, Xuexia
Sun, Junlu
Zhao, Qi
Li, Kaiyong
Shan, Chongxin
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2020, 53 (48)
[50] High-Performance Ultraviolet Photodetectors Based on Nanoporous GaN with a Ga2O3 Single-Crystal Layer
Wen, Junjie
Wang, Yuankang
Zhang, Biao
Chen, Rongrong
Zhu, Hongyan
Han, Xinyu
Xiao, Hongdi
NANOMATERIALS, 2024, 14 (13)

← 1 2 3 4 5 →