Schottky β-Ga2O3 Solar-Blind UV Photodetectors

被引：0

作者：

Yang L.-H. ^{[1
]}

Zhang B.-H. ^{[1
]}

Guo F.-Q. ^{[1
]}

Chen D.-J. ^{[2
]}

机构：

[1] Department of Physics, Changji University, Changji, 831100, Xinjiang

[2] School of Electronic Science and Engineering, Nanjing University, Nanjing, 210093, Jiangsu

来源：

Zhang, Bao-Hua (zbhcjxy@163.com) | 1600年 / Chinese Institute of Electronics卷 / 48期

关键词：

Schottky; Solar-blind UV photodetector; β-Ga[!sub]2[!/sub]O[!sub]3[!/sub;

D O I：

10.3969/j.issn.0372-2112.2020.06.027

中图分类号：

学科分类号：

摘要：

In this work, we fabricate and investigate the Schottky β-Ga2O3 solar-blind UV photodetectors. The results show that full width at half maximum of the X-ray diffraction peak from (-201) plane of the β-Ga2O3 grown by pulsed laser deposition is only 36 arcsec, indicating that the epitaxial β-Ga2O3 has a high crystal quality. The fabricated Schottky diodes based on the β-Ga2O3 exhibits obvious Schottky rectification characteristic, and the dark current maintains at 0.1 nA magnitude under -5 V bias voltage, and forward conduction voltage is 1.5 V. The photocurrent spectrum show that the device exhibits remarkable peak response at 240 nm, a steep cutoff wavelength at 260 nm, and a rejection ratio of 1000 between in-band and out-band of solar-blind ultraviolet. Meantime, the effects of different dopants on the crystal quality of β-Ga2O3 are also studied. © 2020, Chinese Institute of Electronics. All right reserved.

引用

页码：1240 / 1243

页数：3

共 20 条

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