Metal Wafer Bonding for 3D Interconnects and Advanced Packaging

被引：0
|
作者：
Dragoi, V. [1 ]
Pabo, E. [2 ]
Wagenleitner, T. [1 ]
Floetgen, C. [1 ]
Rebhan, B. [1 ]
Corn, K. [2 ]
机构：
[1] EV Grp, DI E Thallner Str 1, A-4782 St Florian, Austria
[2] EV Grp Inc, Tempe, AZ 85284 USA
来源：
2012 13TH INTERNATIONAL CONFERENCE ON ELECTRONIC PACKAGING TECHNOLOGY & HIGH DENSITY PACKAGING (ICEPT-HDP 2012) | 2012年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Metal films can be used as bonding layers at wafer-level in manufacturing processes for device assembly as well as just for electrical integration of different components. One has to distinguish between two categories of processes: metal thermo-compression bonding on one side, and bonding with formation of a eutectic or an intermetallic alloy layer. The different process principles determine also the applications area for each. From electrical interconnections to wafer-level packaging (with special emphasis on vacuum packaging) metal wafer bonding is a very important technology in manufacturing processes.
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页码：114 / 120
页数：7
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