Ultra low power fault tolerant neural inspired CMOS logic

被引:0
|
作者
Aunet, S [1 ]
Beiu, V [1 ]
机构
[1] Univ Oslo, Dept Informat, N-0316 Oslo, Norway
关键词
D O I
暂无
中图分类号
TP18 [人工智能理论];
学科分类号
081104 ; 0812 ; 0835 ; 1405 ;
摘要
We present a new defect/fault tolerant ultra low power CMOS circuit exploiting low level redundancy. We show that wiring and transistors may be damaged while the functionality is still kept. We also demonstrate a new full adder based on the basic building block, capable of sub V Power-Delay-Product for supply voltages below 100 mV, in a 120 nm process. The Power-Delay-Product is reduced by about 50 % compared to the best previously published FA based on a 6 transistor reconfigurable subthreshold NOR-3, MAJ-3, NAND-3 circuit. Transistors are exploited as four terminal devices operating in subthreshold and DC characteristics for a threshold element is demonstrated by chip measurements.
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收藏
页码:2843 / 2848
页数:6
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