An ultra low-voltage ultra low-power CMOS threshold voltage reference

被引:12
|
作者
Ferreira, Luis H. C. [1 ]
Pimenta, Tales C. [1 ]
Moreno, Robson L. [1 ]
机构
[1] Univ Fed Itajuba, UNIFEI, Itajuba, MG, Brazil
来源
IEICE TRANSACTIONS ON ELECTRONICS | 2007年 / E90C卷 / 10期
关键词
threshold voltage; voltage reference; ultra low-power; ultra low-voltage;
D O I
10.1093/ietele/e90-c.10.2044
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper describes a CMOS voltage reference that makes use of weak inversion CMOS transistors and linear resistors, without the need for bipolar transistors. Its operation is analogous to the bandgap reference voltage. but the reference voltage is based on the threshold voltage of an nMOS transistor. The circuit implemented using 0.35 mu m n-well CMOS TSMC process generates a reference of 741 mV under just 390 nW for a power supply of only 950 mV. The circuit presented a variation of 39 ppm/degrees C for the -20 degrees C to +80 degrees C temperature range, and produced a line regulation of 25 mV/V for a power supply of up to 3 V.
引用
收藏
页码:2044 / 2050
页数:7
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