共 15 条
- [1] Less Reliable Page Error Reduction for 3D-TLC NAND Flash Memories with Data Overhead Reduction by 40% and Data-retention Time Increase by 5.0x [J]. 2019 SILICON NANOELECTRONICS WORKSHOP (SNW), 2019, : 31 - 32
- [2] Data-Retention Characteristics Comparison of 2D and 3D TLC NAND Flash Memories [J]. 2017 IEEE 9TH INTERNATIONAL MEMORY WORKSHOP (IMW), 2017, : 119 - 122
- [3] Data Pattern & Memory Variation Aware Fine-Grained ECC Optimized by Neural Network for 3D-TLC NAND Flash Memories with 2.0x Data-retention Time Extension and 30% Parity Overhead Reduction [J]. 2019 IEEE 11TH INTERNATIONAL MEMORY WORKSHOP (IMW 2019), 2019, : 144 - 147
- [4] Pre-shipment Data-retention/Read-disturb Lifetime Prediction & Aftermarket Cell Error Detection & Correction by Neural Network for 3D-TLC NAND Flash Memory [J]. 2019 SYMPOSIUM ON VLSI TECHNOLOGY, 2019, : T216 - T217
- [5] RTN Impact on Data-Retention Failure/Recovery in Scaled (∼1Ynm) TLC NAND Flash Memories [J]. 2017 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS), 2017,
- [6] 12x Bit-Error Acceptable, 300x Extended Data-Retention Time, Value-Aware SSD with Vertical 3D-TLC NAND Flash Memories for Image Recognition [J]. 2017 IEEE CUSTOM INTEGRATED CIRCUITS CONFERENCE (CICC), 2017,
- [7] Spatial Color-Perceived Data Control of 3D-TLC NAND Flash for Image Dectection [J]. 2020 IEEE SILICON NANOELECTRONICS WORKSHOP (SNW), 2020, : 49 - 50
- [8] Endurance-based Dynamic VTH Distribution Shaping of 3D-TLC NAND Flash Memories to Suppress Both Lateral Charge Migration and Vertical Charge De-trap and Increase Data-retention Time by 2.7x [J]. 2018 48TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE (ESSDERC), 2018, : 150 - 153
- [9] 3D-NAND Flash Solid-State Drive (SSD) for Deep Neural Network Weight Storage of IoT Edge Devices with 700x Data-retention Lifetime Extention [J]. 2018 IEEE 10TH INTERNATIONAL MEMORY WORKSHOP (IMW), 2018, : 183 - 186
- [10] Error Crrection for Read-hot Data in 3D-TLC NAND Flash by Read-disturb Modeled Artificial Neural Network Coupled LDPC ECC [J]. 2019 SILICON NANOELECTRONICS WORKSHOP (SNW), 2019, : 29 - 30