Crosstalk analysis for a CMOS gate driven inductively and capacitively coupled interconnects

被引：38

作者：

Kaushik, B. K. ^{[1
]}

Sarkar, S. ^{[2
]}

机构：

[1] GB Pant Engn Coll, Dept Elect & Elect Engn, Pauri Garhwal 246001, Uttarakhand, India

[2] Mody Inst Technol & Sci, Dept Elect & Commun Engn, Lakshmangarh 332311, Rajasthan, India

来源：

MICROELECTRONICS JOURNAL | 2008年 / 39卷 / 12期

关键词：

Coupling; Crosstalk noise; Inductance; Integrated circuit interconnect; Mutual inductance; Signal integrity; Transmission lines;

D O I：

10.1016/j.mejo.2008.03.015

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper deals with crosstalk analysis of a CMOS driven capacitively and inductively coupled interconnect. The Alpha Power Law model of MOS transistor is used to represent a CMOS driver. This is combined with a transmission line-based coupled RLC model of interconnect to develop a composite model for analytical purpose. On this basis a transient analysis of crosstalk noise is carried out. Comparison of the analytical results with SPICE extracted results shows that the error involved is nominal. (C) 2008 Elsevier Ltd. All rights reserved.

引用

页码：1834 / 1842

页数：9

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