Design of an 8-bit 1GS/s F&I ADC in 0,13μm SiGe BiCMOS Technology

被引:0
|
作者
Barzdenas, V. [1 ]
Poviliauskas, D. [1 ]
Grazulevicius, G. [1 ]
Kiela, K. [1 ]
机构
[1] Vilnius Gediminas Tech Univ, Dept Comp Engn, LT-03227 Vilnius, Lithuania
关键词
SIMULATION;
D O I
10.5755/j01.eee.122.6.1821
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
V. Barzdenas, D. Poviliauskas, G. Grazulevicius, K. Kiela. Design of an 8-bit 1GS/s F&I ADC in 0,13 mu m SiGe BiCMOS Technology // Electronics and Electrical Engineering. - Kaunas: Technologija, 2012. - No. 6(122). - P. 55-58. In this paper, design and simulation results of an 8-bit 1 GS/s clock speed folding and interpolating analog-digital converter (F&I ADC) are presented. The converter for four lower bits used folding with interpolation whose coefficients respectively equal to 8 and 6, and four upper bits made using parallel comparators structure. ADC design and simulations carried out with Cadence software packages. Dynamic characteristics of the converter are presented, which shows that signal-to-noise and distortion ratio (SNDR) and spurious-free dynamic range (SFDR) at 1 MHz input signal and 1 GS/s clock frequency is respectively equal to 49,7/54,6 dB. It is also identified effective number of bits (ENOB), which is approximately equal to 8-bit, when the input signal frequency is 1 MHz and at 500 MHz, ENOB drops to around 6-bit. After static characteristics simulation were got that the differential nonlinearity (DNL) did not exceed 0,4 LSB and integral nonlinearity (INL) is less than +/- 0,6 LSB. Ill. 8, bibl. 6, tabl. 1 (in English; abstracts in English and Lithuanian).
引用
收藏
页码:55 / 58
页数:4
相关论文
共 42 条
  • [21] A 8-Bit 1-GS/s Subranged ADC in 65-nm CMOS Process
    Chen, Hsin-Liang
    Yang, Shu-Chuan
    2015 INTERNATIONAL SYMPOSIUM ON INTELLIGENT SIGNAL PROCESSING AND COMMUNICATION SYSTEMS (ISPACS), 2015, : 40 - 43
  • [22] A 1.8V 12-bit 1GS/s SiGe BiCMOS time-interleaved Analog-to-Digital converter
    Xu, Mingyuan
    Li, Liang
    Shen, Xiaofeng
    Chen, Xi
    PROCEEDINGS OF THE 3RD INTERNATIONAL CONFERENCE ON MATERIAL, MECHANICAL AND MANUFACTURING ENGINEERING, 2015, 27 : 922 - 925
  • [23] AN 8-BIT 1-GS/S FLASH-ASSISTED TIME-INTERLEAVED SAR ADC
    Xiang, Jixuan
    Chen, Huabin
    Chen, Chixiao
    Ye, Fan
    Xu, Jun
    Ren, Junyan
    2014 12TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT), 2014,
  • [24] MDAC Design for an 8-bit 40 MS/s Pipelined ADC in a 0.18μm CMOS Process
    Dendouga, Abdelghani
    Oussalah, Slimane
    Lakhdar, Nacereddine
    Lakehal, Brahim
    2018 INTERNATIONAL CONFERENCE ON COMMUNICATIONS AND ELECTRICAL ENGINEERING (ICCEE), 2018, : 160 - 162
  • [25] 0.85 mW, 8-bit, 1GS/s, 58dB SFDR Cryogenic DAC for Superconducting Qubit Control Applications
    Sim, Chan Kuen
    Mani, Aarthy
    Anh Tuan Do
    2023 20TH INTERNATIONAL SOC DESIGN CONFERENCE, ISOCC, 2023, : 93 - 94
  • [26] A 6-Bit, 12.5 GS/s Comparator for High-Speed A/D Conversion in 0.35 μM SiGe BiCMOS Technology
    Yin, Kuai
    Meng, Qiao
    Liu, Haitao
    Tang, Kai
    MECHANICAL ENGINEERING AND TECHNOLOGY, 2012, 125 : 27 - 34
  • [27] An 8-bit 0.7-GS/s Single Channel Flash-SAR ADC in 65-nm CMOS Technology
    Muratore, Dante Gabriel
    Akdikmen, Alper
    Bonizzoni, Edoardo
    Maloberti, Franco
    Chio, U-Fat
    Sin, Sai-Weng
    Martins, Rui Paulo
    ESSCIRC CONFERENCE 2016, 2016, : 421 - 424
  • [28] A 3-Bit 2.2V 3.08pJ/Conversion-Step 11GS/s Flash ADC in A 0.12μm SiGe BiCMOS Technology
    Yao, Yuan
    Dai, Foster
    Irwin, J. David
    Jaeger, Richard C.
    PROCEEDINGS OF THE 2008 BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING, 2008, : 256 - 259
  • [29] An 8-bit 2-GSample/s analog-to-digital converter in 0.5-μm SiGe technology
    Vessal, F
    Salama, CAT
    PROCEEDINGS OF THE 2003 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS, VOL I: ANALOG CIRCUITS AND SIGNAL PROCESSING, 2003, : 893 - 896
  • [30] A 16-mW 8-Bit 1-GS/s Digital-Subranging ADC in 55-nm CMOS
    Chung, Yung-Hui
    Wu, Jieh-Tsorng
    IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS, 2015, 23 (03) : 557 - 566