New Observations on the Two-Stage Degradation of Hot Carrier Reliability in High-k/Metal-gate MOSFETs

被引：0
|
作者：
Yu, Zhuoqing [1 ]
Guo, Shaofeng [1 ]
Wang, Runsheng [1 ]
Hao, Peng [1 ]
Huang, Ru [1 ]
机构：
[1] Peking Univ, Inst Microelect, Beijing 100871, Peoples R China
来源：
2017 IEEE 24TH INTERNATIONAL SYMPOSIUM ON THE PHYSICAL AND FAILURE ANALYSIS OF INTEGRATED CIRCUITS (IPFA) | 2017年
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, it is reported for the first time that, in nanoscale high-k/metal-gate MOSFETs, the hot carrier degradation (HCD) follows a two-stage law in some stress conditions. Both interface traps and oxide traps contribute to HCD causing its time-dependence varies with different stress modes. The results are helpful for the physical understanding of HCD in nanoscale devices.
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页数：4
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