Carrier transport mechanism in La-incorporated high-k dielectric/metal gate stack MOSFETs

被引：10

作者：

Kwon, Hyuk-Min ^{[1
]}

Choi, Won-Ho ^{[1
,2
,3
]}

Han, In-Shik ^{[1
]}

Na, Min-Ki ^{[1
]}

Park, Sang-Uk ^{[1
]}

Bok, Jung-Deuk ^{[1
]}

Kang, Chang-Yong ^{[3
]}

Lee, Byoung-Hun ^{[4
]}

Jammy, Raj ^{[3
]}

Lee, Hi-Deok ^{[1
]}

机构：

[1] Chungnam Natl Univ, Dept Elect Engn, Taejon 305764, South Korea

[2] Univ Texas Austin, Austin, TX 78758 USA

[3] Int SEMATECH, Austin, TX 78741 USA

[4] GIST, Dept Mat Sci & Engn, Kwangju 500712, South Korea

来源：

MICROELECTRONIC ENGINEERING | 2011年 / 88卷 / 12期

关键词：

High-k; HfLaSiON; Gate current; Frenkel-Poole (F-P) emission; Fowler-Nordheim (F-N) tunneling; Schottky emission; Trap-assisted tunneling (TAT); Trap energy level; TEMPERATURE-DEPENDENCE;

D O I：

10.1016/j.mee.2010.04.002

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, carrier transport mechanism of MOSFETs with HfLaSiON was analyzed. It was shown that gate current is consisted of Schottky emission, Frenkel-Poole (F-P) emission and Fowler-Nordheim (F-N) tunneling components. Schottky barrier height is calculated to be 0.829 eV from Schottky emission model. Fowler-Nordheim tunneling barrier height was 0.941 eV at high electric field regions and the trap energy level extracted using Frenkel-Poole emission model was 0.907 eV. From the deviation of weak temperature dependence for gate leakage current at low electric field region. TAT mechanism is alto considered. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：3399 / 3403

页数：5

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