Observation of Slow Oxide Traps at MOSFETs Having Metal/High-k Gate Dielectric Stack in Accumulation Mode

被引：6
|
作者：
Cho, Heung-Jae [1 ,3 ]
Son, Younghwan
Oh, Byoungchan
Lee, Sanghoon [2 ]
Lee, Jong-Ho
Park, Byung-Gook
Shin, Hyungcheol
机构：
[1] Hynix Semicond Incorporation, Ichon 467701, South Korea
[2] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA
[3] Seoul Natl Univ, Sch Elect Engn & Comp Sci, Seoul 151742, South Korea
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2010年 / 57卷 / 10期
关键词：
Accumulation mode; I-g random telegraph noise (RTN); metal/high-k gate dielectric stack; random telegraph noise (RTN); slow oxide trap; trap location; trap's energy level; RANDOM TELEGRAPH NOISE; LOW-FREQUENCY NOISE; I-G-RTN; LEAKAGE CURRENT; EXTRACTION; NMOSFETS; ENERGY;
D O I：
10.1109/TED.2010.2057251
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The random telegraph noise in a gate leakage current in an accumulation mode has been studied to characterize slow oxide traps at nMOSFET devices having a TiN/HfO2/SiO2 gate stack. New equations for the trap's vertical location and energy level were derived by means of the relation between the trap's energy and Fermi levels in the accumulation mode. Through our analysis in both the accumulation and inversion modes, we found that the measurement in the accumulation mode is complementary to that in the inversion mode in order to assess the traps within a wide range of energy levels.
引用
收藏
页码：2697 / 2703
页数：7
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