New generation of Z-RAM

被引：115

作者：

Okhonin, S. ^{[1
]}

Nagoga, M. ^{[1
]}

Carman, E. ^{[1
]}

Beffa, R. ^{[1
]}

Faraoni, E. ^{[1
]}

机构：

[1] PSE B, Innovat Silicon, Lausanne, Switzerland

来源：

2007 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, VOLS 1 AND 2 | 2007年

关键词：

D O I：

10.1109/IEDM.2007.4419103

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A new generation of the single transistor floating body DRAM is introduced for the first time. The new memory is largely based on the bipolar transistor existing in the MOS structure. The memory's main features are high margin, low-power consumption, and scalability.

引用

页码：925 / 928

页数：4

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