New generation of Z-RAM

被引:115
|
作者
Okhonin, S. [1 ]
Nagoga, M. [1 ]
Carman, E. [1 ]
Beffa, R. [1 ]
Faraoni, E. [1 ]
机构
[1] PSE B, Innovat Silicon, Lausanne, Switzerland
关键词
D O I
10.1109/IEDM.2007.4419103
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
A new generation of the single transistor floating body DRAM is introduced for the first time. The new memory is largely based on the bipolar transistor existing in the MOS structure. The memory's main features are high margin, low-power consumption, and scalability.
引用
收藏
页码:925 / 928
页数:4
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