Z-RAM steps into SRAM's territory

被引:0
|
作者
Innovative Silicon, Switzerland [1 ]
机构
来源
Electron Des | 2006年 / 28卷 / 18期
关键词
Static random access storage;
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [1] Z-RAM Takes on DRAM
    Savage, Neil
    IEEE SPECTRUM, 2010, 47 (07) : 18 - 18
  • [2] New generation of Z-RAM
    Okhonin, S.
    Nagoga, M.
    Carman, E.
    Beffa, R.
    Faraoni, E.
    2007 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, VOLS 1 AND 2, 2007, : 925 - 928
  • [3] Ultra-scaled Z-RAM cell
    Okhonin, S.
    Nagoga, M.
    Lee, C. -W.
    Colinge, J. -P.
    Afzalian, A.
    Yan, R.
    Akhavan, N. Dehdashti
    Xiong, W.
    Sverdlov, V.
    Selberherr, S.
    Mazure, C.
    2008 IEEE INTERNATIONAL SOI CONFERENCE, PROCEEDINGS, 2008, : 157 - +
  • [4] Effect of Source/Drain Asymmetry on the Performance of Z-RAM® Devices
    Mohapatra, N. R.
    vanBentum, R.
    Pruefer, E.
    Maszara, W. P.
    Caillat, C.
    Chalupa, Z.
    Johnson, Z.
    Fisch, D.
    2009 IEEE INTERNATIONAL SOI CONFERENCE, 2009, : 39 - +
  • [5] MODELING AND SIMULATION OF ADVANCED FLOATING BODY Z-RAM MEMORY CELLS
    Sverdlov, Viktor
    Selberherr, Siegfried
    EUROPEAN SIMULATION AND MODELLING CONFERENCE 2008, 2008, : 380 - 384
  • [6] Highly scalable Z-RAM with remarkably long data retention for DRAM application
    Jang, Tae-Su
    Kim, Joong-Sik
    Hwang, Sang-Min
    Oh, Young-Hoon
    Rho, Kwang-Myung
    Chung, Seoung-Ju
    Chung, Su-Ock
    Oh, Jae-Geun
    Bhardwaj, Sunil
    Kwon, Jungtae
    Kim, David
    Nagoga, Mikhail
    Kim, Yong-Taik
    Cha, Seon-Yong
    Moon, Seung-Chan
    Chung, Sung-Woong
    Hong, Sung-Joo
    Park, Sung-Wook
    2009 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS, 2009, : 234 - +
  • [7] Retention characteristics of zero-capacitor RAM (Z-RAM) cell based on FinFET and Tri-Gate devices
    Nagoga, M
    Okhonin, S
    Bassin, C
    Fazan, P
    Xiong, W
    Cleavelin, CR
    Schulz, T
    Schruefer, K
    Gostkowski, M
    Patruno, P
    Maleville, C
    2005 IEEE INTERNATIONAL SOI CONFERENCE, PROCEEDINGS, 2005, : 203 - 204
  • [8] Scaling limits of double-gate and surround-gate Z-RAM cells
    Butt, Nauman Z.
    Alam, Muhammad Ashraful
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2007, 54 (09) : 2255 - 2262
  • [9] Innovative Approach to drive Floating Body Z-RAM® Embedded Memory to 32 nm and beyond
    Fisch, David
    2007 IEEE INTERNATIONAL SOI CONFERENCE PROCEEDINGS, 2007, : 87 - 88
  • [10] Vertical Double Gate Z-RAM technology with remarkable low voltage operation for DRAM application
    Kim, Joong-Sik
    Chung, Sung-Woong
    Jang, Tae-Su
    Lee, Seung-Hwan
    Son, Dong-Hee
    Chung, Seoung-Ju
    Hwang, Sang-Min
    Banna, Srinivasa
    Bhardwaj, Sunil
    Gupta, Mayank
    Kwon, Jungtae
    Kim, David
    Popov, Greg
    Gopinath, Venkatesh
    Van Buskirk, Michael
    Cho, Sang-Hoon
    Roh, Jae-Sung
    Hong, Sung-Joo
    Park, Sung-Wook
    2010 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS, 2010, : 163 - +