Temperature compensation of a MEMS resonator using quality factor as a thermometer

被引：0
|
作者：
Hopcroft, MA [1 ]
Agarwal, M
Park, KK
Kim, B
Jha, CM
Candler, RN
Yama, G
Murmann, B
Kenny, TW
机构：
[1] Stanford Univ, Dept Mech & Elect Engn, Stanford, CA 94305 USA
[2] Robert Bosch Corp, North Amer Res & Technol Ctr, Palo Alto, CA 94304 USA
来源：
MEMS 2006: 19TH IEEE INTERNATIONAL CONFERENCE ON MICRO ELECTRO MECHANICAL SYSTEMS, TECHNICAL DIGEST | 2006年
基金：
美国国家科学基金会;
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Silicon MEMS resonators have great potential for on-chip high frequency signal applications. This paper compares methods of sensing the temperature of an encapsulated silicon MEMS resonator and using this temperature measurement to stabilize the temperature, and hence the resonant frequency, of the resonator. The use of external Pt RTDs, integrated Si thermistors, and the use the Quality factor (Q) of the resonator are explored. Use of the Q as a temperature sensor is explored in detail as it is a nearly ideal temperature sensing method. Characterisations of the temperature sensors and preliminary temperature control results are presented.
引用
收藏
页码：222 / 225
页数：4
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