Modeling of temperature frequency-compensation of doped silicon MEMS resonator

被引：0
|
作者：
Rajai, Payman [1 ]
Straeten, Matthew [1 ]
Liu, Jiewen [1 ]
Xereas, George [2 ]
Ahamed, Mohammed Jalal [1 ]
机构：
[1] Univ Windsor, MicroNano Mechatron Lab, Mech Automot & Mat Engn, Windsor, ON, Canada
[2] NxtSens Microsyst Inc, Montreal, PQ, Canada
来源：
2018 5TH IEEE INTERNATIONAL SYMPOSIUM ON INERTIAL SENSORS & SYSTEMS (INERTIAL 2018) | 2018年
基金：
加拿大自然科学与工程研究理事会;
关键词：
MEMS resonator; temperature compensation; doping; Keyes Theorem; ELASTIC-CONSTANTS;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, an analytical model is presented to predict the temperature sensitivity of doped silicon MEMS resonator. Temperature coefficients of three elastic constants (C-11, C(12)and C-44) were predicted and found in good agreement (similar to 1%) with the experimental values previously reported in the literature. The model was then extended to find relationship between doping and temperate-compensated frequency. Our model shows that the Lame mode frequency of a MEMS resonator can be compensated via an optimum n-doping of around 4x10(19)cm(-3) for working temperature between -40 degrees C to 100 degrees C.
引用
收藏
页码：149 / 150
页数：2
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