Highly Unidirectional Y-Junction-Coupled S-Section InAs/InGaAs/GaAs Quantum-Dot Ring Lasers

被引：0
|
作者：
Qassim, Omar K. [1 ]
Li, Chia-Yeh [1 ]
Withers, Nathan J. [1 ]
Smolyakov, Gennady A. [1 ]
Osinski, Marek [1 ]
机构：
[1] Univ New Mexico, Ctr High Technol Mat, Albuquerque, NM 87106 USA
来源：
2008 IEEE 21ST INTERNATIONAL SEMICONDUCTOR LASER CONFERENCE | 2008年
关键词：
D O I：
10.1109/ISLC.2008.4636041
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Fabrication and characterization of Y-junction-coupled S-section InAs/InGaAs/GaAs quantum-dot ring lasers with low threshold current density and high unidirectionality is reported. The new design suppresses unwanted counterpropagating modes more effectively than in the previous S-section-racetrack devices.
引用
收藏
页码：125 / 126
页数：2
相关论文
共 50 条
  • [21] Junction-Temperature Measurement in InAs/InP(100) Quantum-Dot Lasers
    Li Shi-Guo
    Gong Qian
    Cao Chun-Fang
    Wang Xin-Zhong
    Yan Jin-Yi
    Wang Hai-Yong
    [J]. CHINESE PHYSICS LETTERS, 2015, 32 (01)
  • [22] Junction-Temperature Measurement in InAs/InP（100） Quantum-Dot Lasers
    李世国
    龚谦
    曹春芳
    王新中
    严进一
    王海龙
    [J]. Chinese Physics Letters, 2015, (01) : 79 - 82
  • [23] Junction-Temperature Measurement in InAs/InP(100) Quantum-Dot Lasers
    李世国
    龚谦
    曹春芳
    王新中
    严进一
    王海龙
    [J]. Chinese Physics Letters, 2015, 32 (01) : 79 - 82
  • [24] Low-threshold 1.3 μm ring lasers with InAs/InGaAs/GaAs quantum dot active region
    Gordeev, Nikita Yu
    Kulagina, Marina M.
    Guseva, Yuliya A.
    Serin, Artem A.
    Payusov, Alexey S.
    Kornyshov, Grigorij O.
    Zubov, Fedor, I
    Zhukov, Alexey E.
    Maximov, Mikhail, V
    [J]. LASER PHYSICS LETTERS, 2022, 19 (06)
  • [25] The role of free carriers and excitons on the lasing characteristics of InAs/InGaAs quantum-dot lasers
    Dikshit, A
    Pikal, JM
    [J]. APPLIED PHYSICS LETTERS, 2003, 82 (26) : 4812 - 4814
  • [26] Performance of 1.3-μm InGaAs/GaAs quantum-dot lasers and their physics
    Sugawara, M
    Mukai, K
    Nakata, Y
    Ishilkawa, H
    [J]. LEOS 2000 - IEEE ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS. 1 & 2, 2000, : 123 - 124
  • [27] InAs/GaAs quantum-dot lasers and detectors on silicon substrates for silicon photonics
    Lee, Andrew
    Tang, Mingchu
    Jiang, Qi
    Wu, Jiang
    Seeds, Alwyn
    Liu, Huiyun
    [J]. 2013 IEEE PHOTONICS CONFERENCE (IPC), 2013, : 474 - 475
  • [28] Gain characteristics of InAs/GaAs self-organized quantum-dot lasers
    Harris, L
    Ashmore, AD
    Mowbray, DJ
    Skolnick, MS
    Hopkinson, M
    Hill, G
    Clark, J
    [J]. APPLIED PHYSICS LETTERS, 1999, 75 (22) : 3512 - 3514
  • [29] The influence of In composition on InGaAs-capped InAs/GaAs quantum-dot infrared photodetectors
    Lin, Wei-Hsun
    Chao, Kuang-Ping
    Tseng, Chi-Che
    Mai, Shu-Cheng
    Lin, Shih-Yen
    Wu, Meng-Chyi
    [J]. JOURNAL OF APPLIED PHYSICS, 2009, 106 (05)
  • [30] Highly Efficient Wavelength Conversion in InAs/GaAs Quantum Dot Lasers
    Huang, H.
    Schires, K.
    Raghunathan, R.
    Erasme, D.
    Arsenijevic, D.
    Sandeev, T.
    Bimberg, D.
    Grillot, F.
    [J]. 2015 PHOTONICS CONFERENCE (IPC), 2015,
12345