Junction-Temperature Measurement in InAs/InP(100) Quantum-Dot Lasers

被引：0
|
作者：
李世国 [1 ]
龚谦 [2 ]
曹春芳 [2 ]
王新中 [1 ]
严进一 [2 ]
王海龙 [3 ]
机构：
[1] Department of Electronic Communication and Technology,Shenzhen Institute of Information Technology
[2] State Key Laboratory of Functional Materials for Informatics,Shanghai Institute of Microsystems and Information Technology,Chinese Academy of Sciences
[3] Shandong Provincial Key Laboratory of Laser Polarization and Information Technology,Department of Physics,Qufu Normal
来源：
Chinese Physics Letters. | 2015年 / 32卷 / 01期
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摘要：
We report on the measurement of junction temperature of the InAs/InP(100) quantum dot lasers working in the1.55 μm wavelength region.The measurement is based on analyzing the temperature induced mode shift of the Fabry-Perot cavity.Under pulsed operation mode,more than 20℃ junction temperature rise is measured for the quantum-dot(QD) laser when the duty cycle is increased from 1%to 95%.For a reference quantum well laser,the junction temperature rise is obtained as only around 3℃.The large junction temperature rise might be a crucial factor to improve the performance of QD lasers.
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