Junction-Temperature Measurement in InAs/InP(100) Quantum-Dot Lasers

被引：1
|
作者：
Li Shi-Guo [1 ]
Gong Qian [2 ]
Cao Chun-Fang [2 ]
Wang Xin-Zhong [1 ]
Yan Jin-Yi [2 ]
Wang Hai-Yong [3 ]
机构：
[1] Shenzhen Inst Informat Technol, Dept Elect Commun & Technol, Shenzhen 518172, Peoples R China
[2] Chinese Acad Sci, State Key Lab Funct Mat Informat, Shanghai Inst Microsyst & Informat Technol, Shanghai 200050, Peoples R China
[3] Qufu Normal Univ, Dept Phys, Shandong Prov Key Lab Laser Polarizat & Informat, Qufu 273165, Peoples R China
来源：
CHINESE PHYSICS LETTERS | 2015年 / 32卷 / 01期
关键词：
ROOM-TEMPERATURE; BEAM EPITAXY; OPERATION; INP;
D O I：
10.1088/0256-307X/32/1/014208
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
We report on the measurement of junction temperature of the InAs/InP(100) quantum dot lasers working in the 1.55 mu m wavelength region. The measurement is based on analyzing the temperature induced mode shift of the Fabry-Perot cavity. Under pulsed operation mode, more than 20 degrees C junction temperature rise is measured for the quantum-dot (QD) laser when the duty cycle is increased from 1% to 95%. For a reference quantum well laser, the junction temperature rise is obtained as only around 3 degrees C. The large junction temperature rise might be a crucial factor to improve the performance of QD lasers.
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页数：4
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