Highly Unidirectional Y-Junction-Coupled S-Section InAs/InGaAs/GaAs Quantum-Dot Ring Lasers

被引：0
|
作者：
Qassim, Omar K. [1 ]
Li, Chia-Yeh [1 ]
Withers, Nathan J. [1 ]
Smolyakov, Gennady A. [1 ]
Osinski, Marek [1 ]
机构：
[1] Univ New Mexico, Ctr High Technol Mat, Albuquerque, NM 87106 USA
来源：
2008 IEEE 21ST INTERNATIONAL SEMICONDUCTOR LASER CONFERENCE | 2008年
关键词：
D O I：
10.1109/ISLC.2008.4636041
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Fabrication and characterization of Y-junction-coupled S-section InAs/InGaAs/GaAs quantum-dot ring lasers with low threshold current density and high unidirectionality is reported. The new design suppresses unwanted counterpropagating modes more effectively than in the previous S-section-racetrack devices.
引用
下载
收藏
页码：125 / 126
页数：2
相关论文
共 50 条
  • [31] 1.5 micron InAs quantum dot lasers based on metamorphic InGaAs/GaAs heterostructures
    Ustinov, VM
    Zhukov, AE
    Kovsh, AR
    Maleev, NA
    Mikhrin, SS
    Vasil'ev, AP
    Nikitina, EV
    Semenova, ES
    Kryzbanovskaya, NV
    Musikhin, YG
    Shernyakov, YM
    Maximov, MV
    Ledentsov, NN
    Bimberg, D
    Alferov, ZI
    PROGRESS IN COMPOUND SEMICONDUCTOR MATERIALS III - ELECTRONIC AND OPTOELECTRONIC APPLICATIONS, 2004, 799 : 369 - 374
  • [32] High performance 1300 nm undoped InAs/InGaAs/GaAs quantum dot lasers
    Salhi, A.
    Todaro, M. T.
    Fortunato, L.
    Martiradonna, L.
    Cingolani, R.
    Passaseo, A.
    De Vittorio, M.
    2007 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS, 2007, : 278 - 280
  • [33] Photoluminescence of strain-induced coupled InGaAs/GaAs quantum-dot pairs
    Hong-Wen Ren
    Selvakumar V. Nair
    Jeong-Sik Lee
    Shigeo Sugou
    Yasuaki Matsumoto
    Journal of Electronic Materials, 2000, 29 : 520 - 524
  • [34] Spontaneous emission study on 1.3 μm InAs/InGaAs/GaAs quantum dot lasers
    Liu, C. Y.
    Stubenrauch, M.
    Bimberg, D.
    NANOTECHNOLOGY, 2011, 22 (23)
  • [35] Photoluminescence of strain-induced coupled InGaAs/GaAs quantum-dot pairs
    Ren, HW
    Nair, SV
    Lee, JS
    Sugou, S
    Matsumoto, Y
    JOURNAL OF ELECTRONIC MATERIALS, 2000, 29 (05) : 520 - 524
  • [36] Low threshold current and widely tunable external cavity lasers with chirped multilayer InAs/InGaAs/GaAs quantum-dot structure
    Lin, Gray
    Su, Pei-Yin
    Cheng, Hsu-Chieh
    OPTICS EXPRESS, 2012, 20 (04): : 3941 - 3947
  • [37] Fabrication of low-threshold 1.3-μm InAs/InGaAs/GaAs quantum-dot lasers operating at room temperature
    Martiradonna, Luigi
    De Benedetto, Egidio
    Fortunato, Laura
    Cingolani, Roberto
    De Vittorio, Massimo
    Salhi, Abdelmajid
    Tasco, Vittorianna
    De Giorgi, Milena
    Passaseo, Adriana
    Visimberga, Giuseppe
    PRIME 2006: 2ND CONFERENCE ON PH.D. RESEARCH IN MICROELECTRONIC AND ELECTRONICS, PROCEEDINGS, 2006, : 397 - +
  • [38] Large-Signal Performance of 1.3 μm InAs/GaAs quantum-dot lasers
    Ji, H. M.
    Cao, Y. L.
    Xu, P. F.
    Gu, Y. X.
    Ma, W. Q.
    Liu, Y.
    Wang, X.
    Xie, L.
    Yang, T.
    2009 LASERS & ELECTRO-OPTICS & THE PACIFIC RIM CONFERENCE ON LASERS AND ELECTRO-OPTICS, VOLS 1 AND 2, 2009, : 239 - 240
  • [39] InAs quantum-dot GaAs-based lasers grown on AlGaAsSb metamorphic buffers
    Xin, Y.-C.
    Vaughn, L.G.
    Dawson, L.R.
    Stintz, A.
    Lin, Y.
    Lester, L.F.
    Huffaker, D.L.
    Journal of Applied Physics, 2003, 94 (03): : 2133 - 2135
  • [40] Geometrical Effects on Characteristic Temperature and Modal Gain of InAs/GaAs Quantum-Dot Lasers
    Wang, Rui
    Yoon, Soon Fatt
    Zhao, Han Xue
    Ngo, Chun Yong
    IEEE PHOTONICS TECHNOLOGY LETTERS, 2011, 23 (13) : 863 - 865
12345