Numerical modeling of triple material gate stack gate all-around (TMGSGAA) MOSFET considering quantum mechanical effects

被引：28
|
作者：
Padmanaban, B. [1 ]
Ramesh, R. [2 ]
Nirmal, D. [3 ]
Sathiyamoorthy, S. [1 ]
机构：
[1] JJ Coll Engn & Technol, Dept Elect & Instrumentat Engn, Tiruchirappalli 620009, India
[2] SASTRA Univ, Sch Elect & Elect Engn, Dept Elect & Commun Engn, Thanjavur 613401, India
[3] Karunya Univ, Sch Elect Sci, Dept Elect & Commun Engn, Coimbatore 641114, Tamil Nadu, India
来源：
SUPERLATTICES AND MICROSTRUCTURES | 2015年 / 82卷
关键词：
Gate stack engineering; GSGAA MOSFET; Schrodinger equation; Quantum mechanical effects; CMOS inverter; Leibmann's iteration; SUBTHRESHOLD;
D O I：
10.1016/j.spmi.2015.01.021
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
A 20 numerical modeling on the characteristics of a triple material gate stack gate all-around (TMGSGAA) MOSFET including quantum mechanical effects has been developed and presented. The device characteristics are obtained from the self-consistent solution of 2D Poisson-Schrodinger equation using Leibmann's iteration method. The various characteristics of the device such as surface potential, electric field, transconductance, drain and transfer characteristics have been estimated. The effect of different high-k materials on the device characteristics has also been discussed. The numerical results are validated with ATLAS TCAD simulation results. The suitability of TMGSGAA MOSFET for circuit applications was also analyzed by implementing the device in an inverter circuit and gain value is estimated. (C) 2015 Elsevier Ltd. All rights reserved.
引用
收藏
页码：40 / 54
页数：15
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