Analytical Modeling and Simulation of Gate-All-Around Junctionless Mosfet for Biosensing Applications

被引：15

作者：

Preethi, S. ^{[1
]}

Venkatesh, M. ^{[2
]}

Pandian, M. Karthigai ^{[3
]}

Priya, G. Lakshmi ^{[4
]}

机构：

[1] Sri Krishna Coll Technol, Dept ECE, Coimbatore, Tamil Nadu, India

[2] REVA Univ, Sch Elect & Commun Engn, Bengaluru, Karnataka, India

[3] GITAM Deemed Univ, Dept Elect Elect & Commun Engn, Bengaluru, Karnataka, India

[4] VIT Univ, Sch Elect Engn, Chennai, Tamil Nadu, India

来源：

SILICON | 2021年 / 13卷 / 10期

关键词：

Junctionless field effect transistor (JLFET); Gate-All-Around (GAA); Finite differentiation method (FDM); Short channel effects (SCEs); Electric field; Threshold voltage; Sensitivity; THRESHOLD-VOLTAGE;

D O I：

10.1007/s12633-021-01301-2

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

A new analytical model for a Junctionless Field Effect Transistor that can be used in biosensor applications is proposed in this research work. The Semiconductor device analyzed here employs a Gate-All-Around structure made of two dissimilar materials. The main objective of the surrounding gate is to reduce the Short Channel Effects owing to its scalability. This model introduces a novel dual material structure embedded with a nanocavity to make it suitable for biosensing applications. 2-D Poisson's equation is solved using the Finite Differentiation Method to obtain the surface potential, which in turn is employed to determine the electric field and threshold voltage of the proposed structure. Finally, the biosensor sensitivity of the device is analyzed and the obtained results are verified using 2D TCAD simulations.

引用

页码：3755 / 3764

页数：10

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