Analytical Modeling and Simulation of Gate-All-Around Junctionless Mosfet for Biosensing Applications

被引：0
|
作者：
S. Preethi
M. Venkatesh
M. Karthigai Pandian
G. Lakshmi Priya
机构：
[1] Sri Krishna College of Technology,Department of ECE
[2] REVA University,School of Electronics and Communication Engineering
[3] GITAM Deemed to be University,Department of Electrical, Electronics and Communication Engineering
[4] VIT University,School of Electronics Engineering
来源：
Silicon | 2021年 / 13卷
关键词：
Junctionless field effect transistor (JLFET); Gate-All-Around (GAA); Finite differentiation method (FDM); Short channel effects (SCEs); Electric field; Threshold voltage; Sensitivity;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
A new analytical model for a Junctionless Field Effect Transistor that can be used in biosensor applications is proposed in this research work. The Semiconductor device analyzed here employs a Gate-All-Around structure made of two dissimilar materials. The main objective of the surrounding gate is to reduce the Short Channel Effects owing to its scalability. This model introduces a novel dual material structure embedded with a nanocavity to make it suitable for biosensing applications. 2-D Poisson’s equation is solved using the Finite Differentiation Method to obtain the surface potential, which in turn is employed to determine the electric field and threshold voltage of the proposed structure. Finally, the biosensor sensitivity of the device is analyzed and the obtained results are verified using 2D TCAD simulations.
引用
收藏
页码：3755 / 3764
页数：9
相关论文
共 50 条
  • [1] Analytical Modeling and Simulation of Gate-All-Around Junctionless Mosfet for Biosensing Applications
    Preethi, S.
    Venkatesh, M.
    Pandian, M. Karthigai
    Priya, G. Lakshmi
    SILICON, 2021, 13 (10) : 3755 - 3764
  • [2] An Analytical Gate-All-Around MOSFET Model for Circuit Simulation
    Lin, Kuan-Chou
    Ding, Wei-Wen
    Chiang, Meng-Hsueh
    ADVANCES IN MATERIALS SCIENCE AND ENGINEERING, 2015, 2015
  • [3] Analytical Compact Model of Nanowire Junctionless Gate-All-Around MOSFET Implemented in Verilog-A for Circuit Simulation
    Smaani, Billel
    Rahi, Shiromani Balmukund
    Labiod, Samir
    SILICON, 2022, 14 (16) : 10967 - 10976
  • [4] Analytical Compact Model of Nanowire Junctionless Gate-All-Around MOSFET Implemented in Verilog-A for Circuit Simulation
    Billel Smaani
    Shiromani Balmukund Rahi
    Samir Labiod
    Silicon, 2022, 14 : 10967 - 10976
  • [5] A complete Verilog-A Gate-All-Around junctionless MOSFET model
    Moldovan, Oana
    Lime, Francois
    Iniguez, Benjamin
    2015 CONFERENCE ON DESIGN OF CIRCUITS AND INTEGRATED SYSTEMS (DCIS), 2015,
  • [6] An insight into the design of a graded channel gate-all-around (GAA) MOSFET for biosensing applications
    Kannan, Krithik
    Asish, Akshinthala
    Jena, Biswajit
    MICROSYSTEM TECHNOLOGIES-MICRO-AND NANOSYSTEMS-INFORMATION STORAGE AND PROCESSING SYSTEMS, 2024, 30 (08): : 971 - 979
  • [7] Analytical modeling of gate-all-around junctionless transistor based biosensors for detection of neutral biomolecule species
    Pratap, Yogesh
    Kumar, Manoj
    Kabra, Sneha
    Haldar, Subhasis
    Gupta, R. S.
    Gupta, Mridula
    JOURNAL OF COMPUTATIONAL ELECTRONICS, 2018, 17 (01) : 288 - 296
  • [8] Analytical modeling of gate-all-around junctionless transistor based biosensors for detection of neutral biomolecule species
    Yogesh Pratap
    Manoj Kumar
    Sneha Kabra
    Subhasis Haldar
    R. S. Gupta
    Mridula Gupta
    Journal of Computational Electronics, 2018, 17 : 288 - 296
  • [9] Gate-All-Around Junctionless Nanowire MOSFET With Improved Low-Frequency Noise Behavior
    Singh, Pushpapraj
    Singh, Navab
    Miao, Jianmin
    Park, Woo-Tae
    Kwong, Dim-Lee
    IEEE ELECTRON DEVICE LETTERS, 2011, 32 (12) : 1752 - 1754
  • [10] Improved analog and RF performances of gate-all-around junctionless MOSFET with drain and source extensions
    Djeffal, F.
    Ferhati, H.
    Bentrcia, T.
    SUPERLATTICES AND MICROSTRUCTURES, 2016, 90 : 132 - 140
12345