A SiGe BiCMOS High Voltage Driver for Class-S Power Amplifier

被引：0
|
作者：
Park, Bonghyuk [1 ]
Jang, Seunghyun [1 ]
Jung, Jaeho [1 ]
机构：
[1] Elect & Telecommun Res Inst, Taejon 305700, South Korea
来源：
PROCEEDINGS OF THE 2012 IEEE INTERNATIONAL SYMPOSIUM ON RADIO-FREQUENCY INTEGRATION TECHNOLOGY (RFIT) | 2012年
关键词：
high voltage driver; Class-S; Switching power amplifier; BiCMOS; MODULATION;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A high voltage driver for Class-S power amplifier using SiGe BiCMOS process is presented in this paper. This high voltage driver is applied for making high voltage swing at the input of a power amplifier. The input of this driver is 600 mVp-p then the measured output is 780 mVp-p for single-ended. This driver dissipates 202 mW and it is suited for processing a bit stream of 2.4 Gbps and can be used as a driver stage for switching power amplifier. This high voltage driver is measured with fabricated delta-sigma modulator module.
引用
收藏
页码：41 / 43
页数：3
相关论文
共 50 条
  • [21] Bandpass delta-sigma class-S amplifier
    Iwamoto, M
    Jayaraman, A
    Hanington, G
    Chen, PF
    Bellora, A
    Thornton, W
    Larson, LE
    Asbeck, PM
    ELECTRONICS LETTERS, 2000, 36 (12) : 1010 - 1012
  • [22] SIMULATION TECHNIQUE FOR ACLR OF A CLASS-S POWER AMPLIFIER WITH A DELTA-SIGMA MODULATOR
    Lee, Sung Jun
    Jung, Jae Ho
    Lee, Kwang Chun
    MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, 2014, 56 (02) : 462 - 465
  • [23] A 160 GHz High Output Power and High Efficiency Power Amplifier in a 130-nm SiGe BiCMOS Technology
    Li, Xingcun
    Chen, Wenhua
    Wang, Yunfan
    Feng, Zhenghe
    2020 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS SYMPOSIUM (RFIC), 2020, : 199 - 202
  • [24] Design of Fully Integrated RF Power Amplifier Based on SiGe BiCMOS
    Fu H.
    Xiang D.
    Hunan Daxue Xuebao/Journal of Hunan University Natural Sciences, 2024, 51 (02): : 104 - 110
  • [25] A 2.4GHz power amplifier in 0.35μm SiGe BiCMOS
    郝明丽
    石寅
    半导体学报, 2010, 31 (01) : 65 - 68
  • [26] A Broadband Power Amplifier in 130-nm SiGe BiCMOS Technology
    Zhou P.
    Chen J.
    Yan P.
    Hou D.
    Gao H.
    Hong W.
    Chen, Jixin (jxchen@seu.edu.cn), 1600, Institute of Electrical and Electronics Engineers Inc. (04): : 44 - 47
  • [27] Design of W-band SiGe BiCMOS Balanced Power Amplifier
    Xu, Yulong
    Li, Zhuang
    Peng, Guoliang
    Tao, Xiaohui
    Zhang, Yan
    Cao, Rui
    PROCEEDINGS OF THE 2021 CROSS STRAIT RADIO SCIENCE AND WIRELESS TECHNOLOGY CONFERENCE (CSRSWTC), 2021, : 163 - 165
  • [28] A 2.4 GHz power amplifier in 0.35 mu m SiGe BiCMOS
    Hao Mingli
    Shi Yin
    JOURNAL OF SEMICONDUCTORS, 2010, 31 (01)
  • [29] Class-S Amplifier at 450 MHz Using GaN-HEMT Power Switch MMICs
    Meliani, Chafik
    Wentzel, Andreas
    Flucke, Jens
    Ersoy, Erhan
    Chaturvedi, Nidhi
    Lossy, Richard
    Schnieder, Frank
    Janke, Bernd
    Freyer, Stephan
    Wuerfl, Hans-Joachim
    Heinrich, Wolfgang
    FREQUENZ, 2009, 63 (3-4) : 55 - 59
  • [30] A BiCMOS low voltage; low distortion class AB amplifier
    Chen Hai
    Wu Xiaobo
    Yan Xiaolang
    2006 IEEE ASIA PACIFIC CONFERENCE ON CIRCUITS AND SYSTEMS, 2006, : 728 - +
12345