Design of Fully Integrated RF Power Amplifier Based on SiGe BiCMOS

被引：0

作者：

Fu H. ^{[1
]}

Xiang D. ^{[1
]}

机构：

[1] School of Microelectronics, Tianjin University, Tianjin

来源：

Hunan Daxue Xuebao/Journal of Hunan University Natural Sciences | 2024年 / 51卷 / 02期

基金：

国家重点研发计划; 中国国家自然科学基金;

关键词：

heterojunction bipolar transistors; power amplifiers; SiGe technology;

D O I：

10.16339/j.cnki.hdxbzkb.2024230

中图分类号：

学科分类号：

摘要：

A compact fully integrated power amplifier for mobile devices based on the SiGe BiCMOS process is proposed. The design uses a cascode driver stage cascaded with a common emitter power stage to increase the power gain of the amplifier，integrates a CMOS power supply on-chip to provide bias current，and uses distributed ballast resistors and a bias circuit with thermal negative feedback effect to compensate the junction temperature so as to prevent amplifier failure at high-temperature operation. A compact circuit-level thermal coupling model is used to simulate and verify the proposed thermal stabilization measures. The post-simulation results show that PA has an output gain of 32.5 dB in the working range of 2.4~2.5 GHz under a 3.3 V power supply，S11&S22<-10 dB，and the output power at the 1 dB compression point is 25.4 dBm. The maximum junction temperature is less than 65 ℃ （saturation）. The chip area is only 1.25×0.76 mm2. The test results show that in the working environment of -45~ 85 ℃，the amplifier can work well in the application where the gain requirement is 26.5~ 32.9 dB. The output power at the 1 dB compression point is 24.3 dBm. Using a 20 MHz 64-QAM OFDM modulation signal test，the output power of DEVM reaching -30 dB is 18.1 dBm. © 2024 Hunan University. All rights reserved.

引用

页码：104 / 110

页数：6

共 16 条

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