A SiGe BiCMOS High Voltage Driver for Class-S Power Amplifier

被引：0
|
作者：
Park, Bonghyuk [1 ]
Jang, Seunghyun [1 ]
Jung, Jaeho [1 ]
机构：
[1] Elect & Telecommun Res Inst, Taejon 305700, South Korea
来源：
PROCEEDINGS OF THE 2012 IEEE INTERNATIONAL SYMPOSIUM ON RADIO-FREQUENCY INTEGRATION TECHNOLOGY (RFIT) | 2012年
关键词：
high voltage driver; Class-S; Switching power amplifier; BiCMOS; MODULATION;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A high voltage driver for Class-S power amplifier using SiGe BiCMOS process is presented in this paper. This high voltage driver is applied for making high voltage swing at the input of a power amplifier. The input of this driver is 600 mVp-p then the measured output is 780 mVp-p for single-ended. This driver dissipates 202 mW and it is suited for processing a bit stream of 2.4 Gbps and can be used as a driver stage for switching power amplifier. This high voltage driver is measured with fabricated delta-sigma modulator module.
引用
收藏
页码：41 / 43
页数：3
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