A SiGe BiCMOS High Voltage Driver for Class-S Power Amplifier

被引：0
|
作者：
Park, Bonghyuk [1 ]
Jang, Seunghyun [1 ]
Jung, Jaeho [1 ]
机构：
[1] Elect & Telecommun Res Inst, Taejon 305700, South Korea
来源：
PROCEEDINGS OF THE 2012 IEEE INTERNATIONAL SYMPOSIUM ON RADIO-FREQUENCY INTEGRATION TECHNOLOGY (RFIT) | 2012年
关键词：
high voltage driver; Class-S; Switching power amplifier; BiCMOS; MODULATION;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A high voltage driver for Class-S power amplifier using SiGe BiCMOS process is presented in this paper. This high voltage driver is applied for making high voltage swing at the input of a power amplifier. The input of this driver is 600 mVp-p then the measured output is 780 mVp-p for single-ended. This driver dissipates 202 mW and it is suited for processing a bit stream of 2.4 Gbps and can be used as a driver stage for switching power amplifier. This high voltage driver is measured with fabricated delta-sigma modulator module.
引用
收藏
页码：41 / 43
页数：3
相关论文
共 50 条
  • [41] A 2.2 GS/s 900 MHz Bandpass Delta-Sigma Modulator for Class-S power amplifier
    Ostrovskyy, P.
    Borokhovych, Y.
    Fischer, G.
    Gustat, H.
    Scheytt, Ch.
    IEEE INTERNATIONAL CONFERENCE ON MICROWAVES, COMMUNICATIONS, ANTENNAS AND ELECTRONICS SYSTEMS (COMCAS 2009), 2009,
  • [42] A Compact SiGe BiCMOS Distributed Power Amplifier in 5-24 GHz
    Altintas, Kutay
    Burak, Abdurrahman
    Ozkan, Tahsin Alper
    Gurbuz, Yasar
    2023 18TH EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE, EUMIC, 2023, : 269 - 272
  • [43] A Fully Integrated S-Band Power Amplifier in 0.35um-SiGe BiCMOS Technology
    Li, Kang
    Huang, Guodong
    Yang, Xiaofeng
    Feng, Qian
    Zhu, Chaoxian
    Liu Chi
    MEMS, NANO AND SMART SYSTEMS, PTS 1-6, 2012, 403-408 : 2481 - 2484
  • [44] An AlGaN/GaN Class-S Amplifier for RF-Communication Signals
    Leberer, Ralf
    Reber, Rolf
    Oppermann, Martin
    2008 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-4, 2008, : 85 - 88
  • [45] A 9 GS/s 2.1..2.2 GHz Bandpass Delta-Sigma Modulator for Class-S power amplifier
    Ostrovskyy, P.
    Gustat, H.
    Scheytt, Ch.
    Manoli, Y.
    2009 IEEE/MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM, VOLS 1-3, 2009, : 1129 - +
  • [46] A 12-GHz High Output Power Amplifier using 0.18μm SiGe BiCMOS for Low power Applications
    Kumar, Thangarasu Bharatha
    Ma, Kaixue
    Yeo, Kiat Seng
    Lim, Wei Meng
    2012 IEEE ASIA PACIFIC CONFERENCE ON CIRCUITS AND SYSTEMS (APCCAS), 2012, : 180 - 183
  • [47] A fully monolithic 0.18 mu m SiGe BiCMOS power amplifier design
    Chen Lei
    Ruan Ying
    Su Jie
    Zhang Shulin
    Shi Chunqi
    Lai Zongsheng
    JOURNAL OF SEMICONDUCTORS, 2011, 32 (05)
  • [48] SiGe BiCMOS Power Amplifier with a Switchable Output Matching Network for Efficiency Enhancement
    Lee, Yi-Chun
    Li, Hsiao-Yun
    Fu, Jia-Shiang
    2015 IEEE RADIO AND WIRELESS SYMPOSIUM (RWS), 2015, : 62 - 64
  • [49] A 19.4 dBm, Q-Band Class-E Power Amplifier in a 0.12 μm SiGe BiCMOS Process
    Kalantari, Nader
    Buckwalter, James F.
    IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 2010, 20 (05) : 283 - 285
  • [50] High-speed transimpedance amplifier with runtime adaptive bandwidth and power consumption in 0.13 μm SiGe BiCMOS
    Schoeniger, D.
    Henker, R.
    Ellinger, F.
    ELECTRONICS LETTERS, 2016, 52 (02) : 154 - 155
12345