Electron transport in thin-film transistors from an n-type conjugated polymer

被引：3
|
作者：
Babel, A
Jenekhe, SA [1 ]
机构：
[1] Univ Washington, Dept Chem Engn, Seattle, WA 98195 USA
[2] Univ Washington, Dept Chem, Seattle, WA 98195 USA
来源：
ADVANCED MATERIALS | 2002年 / 14卷 / 05期
关键词：
D O I：
10.1002/1521-4095(20020304)14:5<371::AID-ADMA371>3.0.CO;2-5
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
n-Type field-effect transistors (see Figure) with electron mobilities as high as 5 × 10-4 cm2/V s -the highest field-effect mobility of electrons observed to date in a conjugated polymer-have been obtained. Improvements in the purification and control of the morphology of thin films should result in even higher electron mobilities for this type of conjugated polymers.
引用
收藏
页码：371 / 374
页数：4
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