Solution-processed organic n-type thin-film transistors

被引：173
|
作者：
Waldauf, C
Schilinsky, P
Perisutti, M
Hauch, J
Brabec, CJ
机构：
[1] Siemens AG, Innovat Polymer, D-91052 Erlangen, Germany
[2] Carl von Ossietzky Univ Oldenburg, Dept Energy & Semicond Res, D-26129 Oldenburg, Germany
来源：
ADVANCED MATERIALS | 2003年 / 15卷 / 24期
关键词：
D O I：
10.1002/adma.200305623
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
An organic n-type transistor, where both insulating and active layer were processed from solution, has been produced. As the active layer the C-60-derivative, [6,6]-phenyl C-61-butyric acid methyl ester (PCBM), was used. Its electron mobility was determined to be as high as mu(e) = 4.5 x 10(-3) cm(2) V-1 s(-1) when calcium drain/source contacts were used. If these contacts are formed from more air-stable metals, the device performance decreases.
引用
收藏
页码：2084 / +
页数：6
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