Electron transport in thin-film transistors from an n-type conjugated polymer

被引：3

作者：

Babel, A

Jenekhe, SA ^{[1
]}

机构：

[1] Univ Washington, Dept Chem Engn, Seattle, WA 98195 USA

[2] Univ Washington, Dept Chem, Seattle, WA 98195 USA

来源：

ADVANCED MATERIALS | 2002年 / 14卷 / 05期

关键词：

D O I：

10.1002/1521-4095(20020304)14:5<371::AID-ADMA371>3.0.CO;2-5

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

n-Type field-effect transistors (see Figure) with electron mobilities as high as 5 × 10-4 cm2/V s -the highest field-effect mobility of electrons observed to date in a conjugated polymer-have been obtained. Improvements in the purification and control of the morphology of thin films should result in even higher electron mobilities for this type of conjugated polymers.

引用

页码：371 / 374

页数：4

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