Fullerene based n-type organic thin-film transistors

被引:61
|
作者
Haddock, JN [1 ]
Zhang, XH [1 ]
Domercq, B [1 ]
Kippelen, B [1 ]
机构
[1] Georgia Inst Technol, Sch Elect & Comp Engn, Ctr Organ Photon & Elect, Atlanta, GA 30332 USA
基金
美国国家科学基金会;
关键词
organic electronics; complementary logic; thin-film transistors; fullerenes;
D O I
10.1016/j.orgel.2005.06.002
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Significant progress has been made in the area of p-type organic field effect transistors while progress in developing n-type materials and devices has been comparatively lacking, a limiting factor in the pursuit to develop complementary organic electronic circuits. Given the need for n-type organic semiconductors we have carried out studies using two different fullerene molecules, C-60 and C-70. Here, we report mobilities for C-60 ranging from 0.02 cm(2)/V s up to 0.65 cm(2)/V s (depending on channel length), and mobilities from 0.003 cm(2)/V s up to 0.066 cm(2)/V S for C-70. All devices were fabricated with organic films deposited under high vacuum but tested at ambient pressures under nitrogen. (c) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码:182 / 187
页数:6
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