Soluble N-Type organic thin-film transistors with enhanced electrical characteristics

被引:8
|
作者
Lee, Ho Won [1 ]
Lee, Seok Jae [1 ]
Koo, Ja Ryong [1 ]
Cho, Eou Sik [2 ]
Kwon, Sang Jik [2 ]
Kim, Woo Young [3 ]
Park, Jaehoon [4 ]
Kim, Young Kwan [1 ]
机构
[1] Hongik Univ, Dept Informat Display, Seoul 121791, South Korea
[2] Gachon Univ, Dept Elect Engn, Songnam 461701, South Korea
[3] Hoseo Univ, Sch Display Engn, Asan 336795, South Korea
[4] Hallym Univ, Dept Elect Engn, Chunchon 200702, South Korea
基金
新加坡国家研究基金会;
关键词
OTFT; PCBM; c-PVP organic buffer layer; drop-casting; hysteresis; BIAS STRESS; ELECTRONICS;
D O I
10.1007/s13391-013-6031-5
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We fabricated and investigated soluble, organic, thin-film transistors (OTFTs) containing '[6, 6]-phenyl-C61-butyric acid methyl ester (PCBM)' as a semiconducting layer, and an organic dielectric buffer (cross-linked poly-4-vinylphenol) as a dielectric buffer-layer to improve electrical characteristics. The semiconducting layer of the devices was fabricated by the drop-casting method where PCBM was dissolved in three different solvents (odichlorobenzene, chloroform, and chlorobenzene). From the transfer and output characteristics of the PCBM OTFTs, a threshold voltage of 10 V, sub-threshold slope of 10 V/dec, on/off current ratio of 7.305 x 10(3), and field-effect mobility of 1.53 x 10(-2) cm(2)/Vs were obtained; for PCBM using o-dichlorobenzene solvent and an organic dielectric buffer layer. It was also found that the hysteresis for the same device was improved conspicuously compared to the other devices, by the above-mentioned condition.
引用
收藏
页码:865 / 869
页数:5
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