Normally-off AlGaN/GaN-based MOS-HEMT with self-terminating TMAH wet recess etching

被引：9

作者：

Son, Dong-Hyeok ^{[1
]}

Jo, Young-Woo ^{[1
]}

Won, Chul-Ho ^{[1
]}

Lee, Jun-Hyeok ^{[1
]}

Seo, Jae Hwa ^{[1
]}

Lee, Sang-Heung ^{[3
]}

Lim, Jong-Won ^{[3
]}

Kim, Ji Heon ^{[4
]}

Kang, In Man ^{[1
]}

Cristoloveanu, Sorin ^{[2
]}

Lee, Jung-Hee ^{[1
]}

机构：

[1] Kyungpook Natl Univ, Sch Elect Engn, Daegu 41566, South Korea

[2] Grenoble Polytech Inst, Inst Microelect Electromagnestim & Photon, F-38016 Grenoble, France

[3] Elect & Telecommun Res Inst, RF Power Components Res Grp, 218 Gajeong Ro, Daejeon 34129, South Korea

[4] Agcy Def Dev, POB 35-3, Daejeon 34186, South Korea

来源：

SOLID-STATE ELECTRONICS | 2018年 / 141卷

关键词：

Normally-off; Gate recess; Self-terminating wet etching; TMAH solution; Negligible hysteresis; AL2O3/GAN MOSFET; GATE LEAKAGE; PERFORMANCE; OPERATION;

D O I：

10.1016/j.sse.2017.11.002

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Normally-off AlGaN/GaN-based MOS-HEMT has been fabricated by utilizing damage-free self-terminating tetramethyl ammonium hydroxide (TMAH) recess etching. The device exhibited a threshold voltage of +2.0 V with good uniformity, extremely small hysteresis of similar to 20 mV, and maximum drain current of 210 mA/mm. The device also exhibited excellent off-state performances, such as breakdown voltage of similar to 800 V with off-state leakage current as low as similar to 10(-12) A and high on/off current ratio (I-on/I-off ) of 10(10). These excellent device performances are believed to be due to the high quality recessed surface, provided by the simple self-terminating TMAH etching.

引用

页码：7 / 12

页数：6

共 50 条

[31] Physical analysis of normally-off ALD Al2O3/GaN MOSFET with different substrates using self-terminating thermal oxidation-assisted wet etching technique
黄成玉
王金延
张斌
付振
刘芳
王茂俊
李梦军
王鑫
汪晨
何佳音
何燕冬
Chinese Physics B, 2022, (09) : 467 - 474
[32] Critical Heterostructure Design for Low On-Resistance Normally-Off Double-Channel MOS-HEMT
Wei, Jin
Liu, Shenghou
Li, Baikui
Tang, Xi
Tang, Gaofei
Zhang, Zhaofu
Chen, Kevin J.
2016 COMPOUND SEMICONDUCTOR WEEK (CSW) INCLUDES 28TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE & RELATED MATERIALS (IPRM) & 43RD INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS (ISCS), 2016,
[33] Channel Engineering of Normally-OFF AlGaN/GaN MOS-HEMTs by Atomic Layer Etching and High-κ Dielectric
Hu, Qianlan
Li, Sichao
Li, Tiaoyang
Wang, Xin
Li, Xuefei
Wu, Yanqing
IEEE ELECTRON DEVICE LETTERS, 2018, 39 (09) : 1377 - 1380
[34] High-threshold-voltage normally-off recessed MOS-gate AlGaN/GaN HEMT with large gate swing
Zhao Y.-B.
Zhang Y.
Cheng Z.
Huang Y.-L.
Zhang L.
Liu Z.-Q.
Yi X.-Y.
Wang G.-H.
Li J.-M.
Faguang Xuebao/Chinese Journal of Luminescence, 2016, 37 (06): : 720 - 724
[35] Normally-OFF Al2O3/AlGaN/GaN MOS-HEMT on 8 in. Si with Low Leakage Current and High Breakdown Voltage (825 V)
Freedsman, Joseph J.
Egawa, Takashi
Yamaoka, Yuya
Yano, Yoshiki
Ubukata, Akinori
Tabuchi, Toshiya
Matsumoto, Koh
APPLIED PHYSICS EXPRESS, 2014, 7 (04)
[36] Normally-OFF Al2O3/AlGaN/GaN MOS-HEMT on 8 in. Si with low leakage current and high breakdown voltage (825 V)
Research Center for Nano-Device and System, Nagoya Institute of Technology, Nagoya 466-8555, Japan
不详
不详
Appl. Phys. Express, 4
[37] Improved Gate Reliability Normally-Off p-GaN/AlN/AlGaN/GaN HEMT With AlGaN Cap-Layer
Liu, Chia-Hao
Chiu, Hsien-Chin
Wang, Hsiang-Chun
Kao, Hsuan-Ling
Huang, Chong-Rong
IEEE ELECTRON DEVICE LETTERS, 2021, 42 (10) : 1432 - 1435
[38] Modeling and Analysis of Normally-OFF p-GaN Gate AlGaN/GaN HEMT as an ON-Chip Capacitor
Abdulsalam, Azwar
Karumuri, Naveen
Dutta, Gourab
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2020, 67 (09) : 3536 - 3540
[39] Locally non-uniform oxidation in self-terminating thermal oxidation assisted wet etching technique for AlGaN/GaN heterostructure
Liu, Jingqian
Wang, Jinyan
Xu, Zhe
Jiang, Haisang
Yang, Zhenchuan
Wang, Maojun
Yu, Min
Xie, Bing
Wu, Wengang
Ma, Xiaohua
Zhang, Jincheng
Hao, Yue
ELECTRONICS LETTERS, 2015, 51 (23) : 1932 - U96
[40] Polarization-Engineered n+GaN/InGaN/AlGaN/GaN Normally-Off MOS HEMTs
Gregusova, Dagmar
Blaho, Michal
Hascik, Stefan
Sichman, Peter
Laurencikova, Agata
Seifertova, Alena
Derer, Jan
Brunner, Frank
Wuerfl, Joachim
Kuzmik, Jan
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2017, 214 (11):

← 1 2 3 4 5 →