Normally-off AlGaN/GaN-based MOS-HEMT with self-terminating TMAH wet recess etching

被引：9

作者：

Son, Dong-Hyeok ^{[1
]}

Jo, Young-Woo ^{[1
]}

Won, Chul-Ho ^{[1
]}

Lee, Jun-Hyeok ^{[1
]}

Seo, Jae Hwa ^{[1
]}

Lee, Sang-Heung ^{[3
]}

Lim, Jong-Won ^{[3
]}

Kim, Ji Heon ^{[4
]}

Kang, In Man ^{[1
]}

Cristoloveanu, Sorin ^{[2
]}

Lee, Jung-Hee ^{[1
]}

机构：

[1] Kyungpook Natl Univ, Sch Elect Engn, Daegu 41566, South Korea

[2] Grenoble Polytech Inst, Inst Microelect Electromagnestim & Photon, F-38016 Grenoble, France

[3] Elect & Telecommun Res Inst, RF Power Components Res Grp, 218 Gajeong Ro, Daejeon 34129, South Korea

[4] Agcy Def Dev, POB 35-3, Daejeon 34186, South Korea

来源：

SOLID-STATE ELECTRONICS | 2018年 / 141卷

关键词：

Normally-off; Gate recess; Self-terminating wet etching; TMAH solution; Negligible hysteresis; AL2O3/GAN MOSFET; GATE LEAKAGE; PERFORMANCE; OPERATION;

D O I：

10.1016/j.sse.2017.11.002

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Normally-off AlGaN/GaN-based MOS-HEMT has been fabricated by utilizing damage-free self-terminating tetramethyl ammonium hydroxide (TMAH) recess etching. The device exhibited a threshold voltage of +2.0 V with good uniformity, extremely small hysteresis of similar to 20 mV, and maximum drain current of 210 mA/mm. The device also exhibited excellent off-state performances, such as breakdown voltage of similar to 800 V with off-state leakage current as low as similar to 10(-12) A and high on/off current ratio (I-on/I-off ) of 10(10). These excellent device performances are believed to be due to the high quality recessed surface, provided by the simple self-terminating TMAH etching.

引用

页码：7 / 12

页数：6

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