Normally-off AlGaN/GaN-based MOS-HEMT with self-terminating TMAH wet recess etching

被引：9
|
作者：
Son, Dong-Hyeok [1 ]
Jo, Young-Woo [1 ]
Won, Chul-Ho [1 ]
Lee, Jun-Hyeok [1 ]
Seo, Jae Hwa [1 ]
Lee, Sang-Heung [3 ]
Lim, Jong-Won [3 ]
Kim, Ji Heon [4 ]
Kang, In Man [1 ]
Cristoloveanu, Sorin [2 ]
Lee, Jung-Hee [1 ]
机构：
[1] Kyungpook Natl Univ, Sch Elect Engn, Daegu 41566, South Korea
[2] Grenoble Polytech Inst, Inst Microelect Electromagnestim & Photon, F-38016 Grenoble, France
[3] Elect & Telecommun Res Inst, RF Power Components Res Grp, 218 Gajeong Ro, Daejeon 34129, South Korea
[4] Agcy Def Dev, POB 35-3, Daejeon 34186, South Korea
来源：
SOLID-STATE ELECTRONICS | 2018年 / 141卷
关键词：
Normally-off; Gate recess; Self-terminating wet etching; TMAH solution; Negligible hysteresis; AL2O3/GAN MOSFET; GATE LEAKAGE; PERFORMANCE; OPERATION;
D O I：
10.1016/j.sse.2017.11.002
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Normally-off AlGaN/GaN-based MOS-HEMT has been fabricated by utilizing damage-free self-terminating tetramethyl ammonium hydroxide (TMAH) recess etching. The device exhibited a threshold voltage of +2.0 V with good uniformity, extremely small hysteresis of similar to 20 mV, and maximum drain current of 210 mA/mm. The device also exhibited excellent off-state performances, such as breakdown voltage of similar to 800 V with off-state leakage current as low as similar to 10(-12) A and high on/off current ratio (I-on/I-off ) of 10(10). These excellent device performances are believed to be due to the high quality recessed surface, provided by the simple self-terminating TMAH etching.
引用
收藏
页码：7 / 12
页数：6
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